Datasheets
SI2337DS-T1-GE3 by:

Trans MOSFET P-CH 80V 1.2A 3-Pin SOT-23 T/R

Part Details for SI2337DS-T1-GE3 by Vishay Siliconix

Overview of SI2337DS-T1-GE3 by Vishay Siliconix

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for SI2337DS-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # SI2337DS-T1-GE3CT-ND
DigiKey MOSFET P-CH 80V 2.2A SOT23-3 Min Qty: 1 Lead time: 11 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 9305
In Stock
  • 1 $0.9700
  • 10 $0.7910
  • 100 $0.6151
  • 500 $0.5214
  • 1,000 $0.4247
  • 3,000 $0.3998
  • 6,000 $0.3808
  • 9,000 $0.3632
$0.3632 / $0.9700 Buy Now
DISTI # 70616156
RS SI2337DS-T1-GE3 P-channel MOSFET Transistor, 1.75 A, 80 V, 3-Pin TO-236 | Siliconix / Vishay SI2337DS-T1-GE3 RoHS: Not Compliant Min Qty: 20 Package Multiple: 1 Container: Bulk 0
  • 20 $0.9800
  • 200 $0.9300
  • 1,000 $0.8800
  • 2,000 $0.8300
$0.8300 / $0.9800 RFQ

Part Details for SI2337DS-T1-GE3

SI2337DS-T1-GE3 CAD Models

SI2337DS-T1-GE3 Part Data Attributes

SI2337DS-T1-GE3 Vishay Siliconix
Buy Now Datasheet
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SI2337DS-T1-GE3 Vishay Siliconix Trans MOSFET P-CH 80V 1.2A 3-Pin SOT-23 T/R
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY SILICONIX
Part Package Code SOT-23
Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 0.0012 A
Drain-source On Resistance-Max 0.27 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

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