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N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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---|---|---|---|
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ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
SI2336DS-T1-GE3CT-ND
|
DigiKey | MOSFET N-CH 30V 5.2A SOT23-3 Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
27994 In Stock |
|
$0 / $0.4700 | Buy Now |
DISTI #
70459510
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RS | MOSFET N-CH 30V 5.2A SOT-23 | Siliconix / Vishay SI2336DS-T1-GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Container: Bulk | 0 |
|
$0.3530 / $0.4160 | RFQ |
|
New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 6000 |
|
$0.1777 | Buy Now |
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SI2336DS-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI2336DS-T1-GE3
Vishay Siliconix
N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel
|
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | SOT-23 | |
Package Description | SMALL OUTLINE, R-PDSO-G3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 5.2 A | |
Drain-source On Resistance-Max | 0.042 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-236 | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.8 W | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SI2336DS-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2336DS-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SI2334DS-T1-GE3 | N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel | Vishay Siliconix | SI2336DS-T1-GE3 vs SI2334DS-T1-GE3 |
SI2334DS-T1-GE3 | Small Signal Field-Effect Transistor, 4.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SI2336DS-T1-GE3 vs SI2334DS-T1-GE3 |
SI2336DS-T1-GE3 | Small Signal Field-Effect Transistor, 5.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SI2336DS-T1-GE3 vs SI2336DS-T1-GE3 |