Part Details for SI2333DS-T1-BE3 by Vishay Intertechnologies
Overview of SI2333DS-T1-BE3 by Vishay Intertechnologies
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SI2333DS-T1-BE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
42AJ0572
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Newark | P-Channel 12-V (D-S) Mosfet |Vishay SI2333DS-T1-BE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.3530 | Buy Now |
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Future Electronics | -12V, -5.3A, 0.032ohm, P-Channel, TrenchFET® Power MOSFET , SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 3000Reel |
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$0.2800 / $0.3000 | Buy Now |
DISTI #
SI2333DS-T1-BE3
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TTI | MOSFETs SOT23 P CHAN 12V RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 51000 In Stock |
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$0.2890 / $0.3060 | Buy Now |
Part Details for SI2333DS-T1-BE3
SI2333DS-T1-BE3 CAD Models
SI2333DS-T1-BE3 Part Data Attributes
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SI2333DS-T1-BE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI2333DS-T1-BE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 4.1A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | TO-236, SOT-23, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 12 V | |
Drain Current-Max (ID) | 4.1 A | |
Drain-source On Resistance-Max | 0.032 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 300 pF | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Surface Mount | YES | |
Terminal Finish | Pure Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SI2333DS-T1-BE3
This table gives cross-reference parts and alternative options found for SI2333DS-T1-BE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2333DS-T1-BE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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SI2333DS | Vishay Intertechnologies | Check for Price | Transistor, | SI2333DS-T1-BE3 vs SI2333DS |