-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Small Signal Field-Effect Transistor, 6A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
TLK106RHBR | Texas Instruments | Industrial Temp, Single Port 10/100Mbs Ethernet Physical Layer Transceiver 32-VQFN 0 to 0 | |
TLK106RHBT | Texas Instruments | Industrial Temp, Single Port 10/100Mbs Ethernet Physical Layer Transceiver 32-VQFN 0 to 0 | |
SN65LVCP1414RLJT | Texas Instruments | 14.2-GBPS Quad Channel, Dual Mode Linear Equalizer 38-WQFN -40 to 85 |
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
62W0564
|
Newark | Mosfet Transistor, P Channel, -6 A, -12 V, 0.023 Ohm, -4.5 V, 400 Mv Rohs Compliant: Yes |Vishay SI2333DDS-T1-GE3 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 18104 |
|
$0.2400 / $0.3240 | Buy Now |
DISTI #
67X6847
|
Newark | P-Channel 12-V (D-S) Mosfet Rohs Compliant: Yes |Vishay SI2333DDS-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.1170 / $0.1900 | Buy Now |
DISTI #
79AH6516
|
Newark | P-Channel 12-V (D-S) Mosfet Rohs Compliant: No |Vishay SI2333DDS-T1-GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.1110 | Buy Now |
DISTI #
SI2333DDS-T1-GE3
|
Avnet Americas | Power MOSFET, P Channel, 12 V, 6 A, 28 Milliohms, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: SI2333DDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
|
$0.1065 / $0.1470 | Buy Now |
DISTI #
78-SI2333DDS-T1-GE3
|
Mouser Electronics | MOSFETs -12V Vds 8V Vgs SOT-23 RoHS: Compliant | 108677 |
|
$0.1160 / $0.4000 | Buy Now |
DISTI #
V36:1790_07433778
|
Arrow Electronics | Trans MOSFET P-CH 12V 6A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks Date Code: 2420 | Americas - 30000 |
|
$0.1105 / $0.1211 | Buy Now |
DISTI #
E02:0323_06007147
|
Arrow Electronics | Trans MOSFET P-CH 12V 6A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks Date Code: 2440 | Europe - 15000 |
|
$0.1169 / $0.1281 | Buy Now |
|
Future Electronics | Single P-Channel 12 V 0.028 Ω 35 nC Surface Mount Power Mosfet - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel |
123000 Reel |
|
$0.1110 / $0.1200 | Buy Now |
|
Future Electronics | Single P-Channel 12 V 0.028 Ω 35 nC Surface Mount Power Mosfet - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks Container: Reel |
69000 Reel |
|
$0.1110 / $0.1200 | Buy Now |
DISTI #
84341276
|
Verical | Trans MOSFET P-CH 12V 6A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2413 | Americas - 87000 |
|
$0.1480 / $0.1846 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
SI2333DDS-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SI2333DDS-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 6A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN
Select a part to compare: |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | TO-236, SOT-23, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 18 Weeks | |
Samacsys Manufacturer | Vishay | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 12 V | |
Drain Current-Max (ID) | 6 A | |
Drain-source On Resistance-Max | 0.028 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 236 pF | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 1.7 W | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SI2333DDS-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2333DDS-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
ZVP3306ASTOB | Zetex / Diodes Inc | Check for Price | Small Signal Field-Effect Transistor, 0.16A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3 | SI2333DDS-T1-GE3 vs ZVP3306ASTOB |
2V7002LT1G | onsemi | $0.1039 | N-Channel Small Signal MOSFET 60V, 115mA, 7.5Ω, SOT-23 (TO-236) 3 LEAD, 3000-REEL, Automotive Qualified | SI2333DDS-T1-GE3 vs 2V7002LT1G |
VN0116N3P007 | Supertex Inc | Check for Price | Small Signal Field-Effect Transistor, 0.25A I(D), 160V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | SI2333DDS-T1-GE3 vs VN0116N3P007 |
2SK1582 | NEC Electronics Group | Check for Price | Small Signal Field-Effect Transistor, 0.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | SI2333DDS-T1-GE3 vs 2SK1582 |
VP0106N6 | Supertex Inc | Check for Price | Small Signal Field-Effect Transistor, 0.35A I(D), 60V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14 | SI2333DDS-T1-GE3 vs VP0106N6 |
2N7008P003 | Supertex Inc | Check for Price | Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN | SI2333DDS-T1-GE3 vs 2N7008P003 |
2N7002L | Motorola Mobility LLC | Check for Price | 115mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | SI2333DDS-T1-GE3 vs 2N7002L |
VP0109N3P007 | Supertex Inc | Check for Price | Small Signal Field-Effect Transistor, 0.25A I(D), 90V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | SI2333DDS-T1-GE3 vs VP0109N3P007 |
2SK3321GR | Toshiba America Electronic Components | Check for Price | TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal | SI2333DDS-T1-GE3 vs 2SK3321GR |
VN0300B | Motorola Mobility LLC | Check for Price | 1250mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39 | SI2333DDS-T1-GE3 vs VN0300B |