Transistors
SI2324DS-T1-GE3
Description: Trans MOSFET N-CH 100V 1.6A T/R

Overview of SI2324DS-T1-GE3 by Vishay Siliconix

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Available Datasheets

Part # Manufacturer Description Datasheet
FIDO5100BBCZ Analog Devices REM Switch
FIDO5200CBCZ Analog Devices REM Switch with EtherCAT
ADIN1300CCPZ Analog Devices Industrial Ethernet Gigabit PH

Price & Stock for SI2324DS-T1-GE3 by Vishay Siliconix

Part # Manufacturer Description Stock Price Buy
DISTI # SI2324DS-T1-GE3CT-ND
DigiKey MOSFET N-CH 100V 2.3A SOT23-3 Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 43915
In Stock
  • 1 $0.4400
  • 10 $0.3720
  • 100 $0.2584
  • 500 $0.2018
  • 1,000 $0.1750
  • 3,000 $0.1750
$0.1750 / $0.4400 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 3000 12000
  • 3,000 $0.4143
  • 12,000 $0.3867
$0.3867 / $0.4143 Buy Now

CAD Models for SI2324DS-T1-GE3 by Vishay Siliconix
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Part Data Attributes for SI2324DS-T1-GE3 by Vishay Siliconix

SI2324DS-T1-GE3
Vishay Siliconix
-
-
Part Life Cycle Code
Active
Ihs Manufacturer
VISHAY SILICONIX
Part Package Code
SOT-23
Package Description
SMALL OUTLINE, R-PDSO-G3
Pin Count
3
Reach Compliance Code
unknown
ECCN Code
EAR99
Samacsys Manufacturer
Vishay
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
2.3 A
Drain-source On Resistance-Max
0.234 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-236AB
JESD-30 Code
R-PDSO-G3
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
2.5 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. SI2324DS-T1-GE3
    Vishay Siliconix
    Trans MOSFET N-CH 100V 1.6A T/R
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Alternate Parts for SI2324DS-T1-GE3

This table gives cross-reference parts and alternative options found for SI2324DS-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2324DS-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
SI2324DS-T1-GE3 Small Signal Field-Effect Transistor, 2.3A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies SI2324DS-T1-GE3 vs SI2324DS-T1-GE3
Part Number Description Manufacturer Compare
SI2324DS-T1-BE3 Small Signal Field-Effect Transistor, Vishay Intertechnologies SI2324DS-T1-GE3 vs SI2324DS-T1-BE3
SI2324DS-T1-GE3 Small Signal Field-Effect Transistor, 2.3A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies SI2324DS-T1-GE3 vs SI2324DS-T1-GE3

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