Datasheets
SI2323DS-T1-GE3 by:

Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN

Part Details for SI2323DS-T1-GE3 by Vishay Intertechnologies

Overview of SI2323DS-T1-GE3 by Vishay Intertechnologies

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Applications Industrial Automation Motor control systems

Price & Stock for SI2323DS-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 38AH2356
Newark P-Channel 20-V (D-S) Mosfet Rohs Compliant: No |Vishay SI2323DS-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 18000
  • 3,000 $0.4640
$0.4640 Buy Now
DISTI # 71T8046
Newark P Channel Mosfet, -20V, 4.7A To-236, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:3.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:8V, Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Vishay SI2323DS-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,000 $0.4870
  • 4,000 $0.4380
  • 6,000 $0.4220
  • 10,000 $0.4130
$0.4130 / $0.4870 Buy Now
DISTI # 16P3711
Newark P Channel Mosfet, -20V, 4.7A To-236, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:4.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:8V, Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Vishay SI2323DS-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 100 $0.6130
$0.6130 Buy Now
DISTI # SI2323DS-T1-GE3
Avnet Americas Trans MOSFET P-CH 20V 3.7A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2323DS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel 18000
  • 3,000 $0.3674
$0.3674 Buy Now
DISTI # 781-SI2323DS-T1-GE3
Mouser Electronics MOSFET 20V 4.7A 1.25W 39 mohms @ 4.5V RoHS: Compliant 161652
  • 1 $0.7100
  • 10 $0.6120
  • 100 $0.4240
  • 500 $0.3550
  • 1,000 $0.3020
  • 3,000 $0.3010
$0.3010 / $0.7100 Buy Now
Future Electronics Single P-Channel 20 V 0.039 Ω 19 nC Surface Mount Power Mosfet - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 24000
Reel
  • 3,000 $0.3150
  • 6,000 $0.3100
  • 9,000 $0.3050
  • 12,000 $0.3050
  • 15,000 $0.2950
$0.2950 / $0.3150 Buy Now
Future Electronics Single P-Channel 20 V 0.039 Ω 19 nC Surface Mount Power Mosfet - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.3150
  • 6,000 $0.3100
  • 9,000 $0.3050
  • 12,000 $0.3050
  • 15,000 $0.2950
$0.2950 / $0.3150 Buy Now
DISTI # SI2323DS-T1-GE3
TTI MOSFET 20V 4.7A 1.25W 39 mohms @ 4.5V RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 30000
In Stock
  • 3,000 $0.2680
  • 6,000 $0.2590
  • 9,000 $0.2420
  • 15,000 $0.2380
  • 30,000 $0.2330
$0.2330 / $0.2680 Buy Now
DISTI # SI2323DS-T1-GE3
TME Transistor: P-MOSFET, unipolar, -20V, -3.8A, Idm: -20A, 1.25W, SOT23 Min Qty: 1 2950
  • 1 $0.9210
  • 10 $0.7220
  • 25 $0.6450
  • 100 $0.5420
  • 250 $0.3870
  • 500 $0.3690
  • 1,000 $0.3480
  • 3,000 $0.3350
$0.3350 / $0.9210 Buy Now
DISTI # SI2323DS-T1-GE3
EBV Elektronik Trans MOSFET P-CH 20V 3.7A 3-Pin TO-236 T/R (Alt: SI2323DS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SI2323DS-T1-GE3

SI2323DS-T1-GE3 CAD Models

SI2323DS-T1-GE3 Part Data Attributes:

SI2323DS-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI2323DS-T1-GE3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description TO-236, SOT-23, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 9 Weeks
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 3.7 A
Drain-source On Resistance-Max 0.039 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 140 pF
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI2323DS-T1-GE3

This table gives cross-reference parts and alternative options found for SI2323DS-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2323DS-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI2323DS-T1-E3 Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN Vishay Intertechnologies SI2323DS-T1-GE3 vs SI2323DS-T1-E3
SI2323DS-T1 Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN Vishay Siliconix SI2323DS-T1-GE3 vs SI2323DS-T1
DMP2035UQ-7 Small Signal Field-Effect Transistor, 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, Diodes Incorporated SI2323DS-T1-GE3 vs DMP2035UQ-7
DMP2035U-13 Small Signal Field-Effect Transistor, Diodes Incorporated SI2323DS-T1-GE3 vs DMP2035U-13
SI2323DS-T1-E3 TRANSISTOR 3700 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, TO-236, 3 PIN, FET General Purpose Small Signal Vishay Siliconix SI2323DS-T1-GE3 vs SI2323DS-T1-E3
Part Number Description Manufacturer Compare
SI2323DS-T1-E3 TRANSISTOR 3700 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, TO-236, 3 PIN, FET General Purpose Small Signal Vishay Siliconix SI2323DS-T1-GE3 vs SI2323DS-T1-E3
AP2303GN-HF TRANSISTOR POWER, FET, FET General Purpose Power Advanced Power Electronics Corp SI2323DS-T1-GE3 vs AP2303GN-HF
SI2323DS-T1 Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN Vishay Siliconix SI2323DS-T1-GE3 vs SI2323DS-T1
DMP2035U-13 Small Signal Field-Effect Transistor, Diodes Incorporated SI2323DS-T1-GE3 vs DMP2035U-13
DMP2035UQ-7 Small Signal Field-Effect Transistor, 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, Diodes Incorporated SI2323DS-T1-GE3 vs DMP2035UQ-7

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