-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
38AH2356
|
Newark | P-Channel 20-V (D-S) Mosfet Rohs Compliant: No |Vishay SI2323DS-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 18000 |
|
$0.4640 | Buy Now |
DISTI #
71T8046
|
Newark | P Channel Mosfet, -20V, 4.7A To-236, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:3.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:8V, Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Vishay SI2323DS-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.4130 / $0.4870 | Buy Now |
DISTI #
16P3711
|
Newark | P Channel Mosfet, -20V, 4.7A To-236, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:4.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:8V, Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Vishay SI2323DS-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$0.6130 | Buy Now |
DISTI #
SI2323DS-T1-GE3
|
Avnet Americas | Trans MOSFET P-CH 20V 3.7A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2323DS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel | 18000 |
|
$0.3674 | Buy Now |
DISTI #
781-SI2323DS-T1-GE3
|
Mouser Electronics | MOSFET 20V 4.7A 1.25W 39 mohms @ 4.5V RoHS: Compliant | 161652 |
|
$0.3010 / $0.7100 | Buy Now |
|
Future Electronics | Single P-Channel 20 V 0.039 Ω 19 nC Surface Mount Power Mosfet - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 24000Reel |
|
$0.2950 / $0.3150 | Buy Now |
|
Future Electronics | Single P-Channel 20 V 0.039 Ω 19 nC Surface Mount Power Mosfet - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
|
$0.2950 / $0.3150 | Buy Now |
DISTI #
SI2323DS-T1-GE3
|
TTI | MOSFET 20V 4.7A 1.25W 39 mohms @ 4.5V RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 30000 In Stock |
|
$0.2330 / $0.2680 | Buy Now |
DISTI #
SI2323DS-T1-GE3
|
TME | Transistor: P-MOSFET, unipolar, -20V, -3.8A, Idm: -20A, 1.25W, SOT23 Min Qty: 1 | 2950 |
|
$0.3350 / $0.9210 | Buy Now |
DISTI #
SI2323DS-T1-GE3
|
EBV Elektronik | Trans MOSFET P-CH 20V 3.7A 3-Pin TO-236 T/R (Alt: SI2323DS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
SI2323DS-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SI2323DS-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN
|
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | TO-236, SOT-23, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 9 Weeks | |
Samacsys Manufacturer | Vishay | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 3.7 A | |
Drain-source On Resistance-Max | 0.039 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 140 pF | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SI2323DS-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2323DS-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SI2323DS-T1-E3 | Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN | Vishay Intertechnologies | SI2323DS-T1-GE3 vs SI2323DS-T1-E3 |
SI2323DS-T1 | Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN | Vishay Siliconix | SI2323DS-T1-GE3 vs SI2323DS-T1 |
DMP2035UQ-7 | Small Signal Field-Effect Transistor, 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | Diodes Incorporated | SI2323DS-T1-GE3 vs DMP2035UQ-7 |
DMP2035U-13 | Small Signal Field-Effect Transistor, | Diodes Incorporated | SI2323DS-T1-GE3 vs DMP2035U-13 |
SI2323DS-T1-E3 | TRANSISTOR 3700 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, TO-236, 3 PIN, FET General Purpose Small Signal | Vishay Siliconix | SI2323DS-T1-GE3 vs SI2323DS-T1-E3 |