Datasheets
SI2308DS-T1-E3 by:

Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Part Details for SI2308DS-T1-E3 by Vishay Intertechnologies

Overview of SI2308DS-T1-E3 by Vishay Intertechnologies

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Price & Stock for SI2308DS-T1-E3

Part # Distributor Description Stock Price Buy
Chip 1 Exchange INSTOCK 564
RFQ
Chip1Cloud MOSFET N-CH 60V 2A SOT23-3 1680
RFQ
DISTI # 1470158
element14 Asia-Pacific MOSFET, N, SOT-23 RoHS: Compliant Min Qty: 1 Container: Cut Tape 0
  • 1 $0.6657
  • 10 $0.5636
  • 100 $0.4623
  • 500 $0.3898
  • 1,000 $0.3299
  • 5,000 $0.3129
$0.3129 / $0.6657 Buy Now
DISTI # 1470158RL
element14 Asia-Pacific MOSFET, N, SOT-23 RoHS: Compliant Min Qty: 100 Container: Reel 0
  • 100 $0.4623
  • 500 $0.3898
  • 1,000 $0.3299
  • 5,000 $0.3129
$0.3129 / $0.4623 Buy Now
DISTI # 1470158
Farnell MOSFET, N, SOT-23 RoHS: Compliant Min Qty: 1 Lead time: 3 Weeks, 1 Days Container: Cut Tape 0
  • 1 $0.6407
  • 25 $0.5779
  • 100 $0.5025
  • 250 $0.4020
  • 500 $0.3517
$0.3517 / $0.6407 Buy Now

Part Details for SI2308DS-T1-E3

SI2308DS-T1-E3 CAD Models

SI2308DS-T1-E3 Part Data Attributes:

SI2308DS-T1-E3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI2308DS-T1-E3 Vishay Intertechnologies Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE
Drain Current-Max (ID) 2 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.25 W
Surface Mount YES
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

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