Datasheets
SI2302DS by:

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Part Details for SI2302DS by Philips Semiconductors

Overview of SI2302DS by Philips Semiconductors

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for SI2302DS

Part # Distributor Description Stock Price Buy
Quest Components MOSFET Transistor, N-Channel, TO-236 2
  • 1 $1.1400
$1.1400 Buy Now

Part Details for SI2302DS

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SI2302DS Part Data Attributes:

SI2302DS Philips Semiconductors
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SI2302DS Philips Semiconductors Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer PHILIPS SEMICONDUCTORS
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE
Drain Current-Max (ID) 2.5 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.83 W
Surface Mount YES
Terminal Finish MATTE TIN

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