Datasheets
SI2302DS,215 by:

N-channel TrenchMOS logic level FET TO-236 3-Pin

Part Details for SI2302DS,215 by NXP Semiconductors

Overview of SI2302DS,215 by NXP Semiconductors

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for SI2302DS,215

Part # Distributor Description Stock Price Buy
Chip1Cloud MOSFET N-CH 20V 2.5A SOT23 26900
RFQ

Part Details for SI2302DS,215

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SI2302DS,215 Part Data Attributes:

SI2302DS,215 NXP Semiconductors
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SI2302DS,215 NXP Semiconductors N-channel TrenchMOS logic level FET TO-236 3-Pin
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code TO-236
Package Description MINIATURE, PLASTIC PACKAGE-3
Pin Count 3
Manufacturer Package Code SOT23
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.75
Samacsys Manufacturer NXP
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 2.5 A
Drain-source On Resistance-Max 0.085 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.83 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI2302DS,215

This table gives cross-reference parts and alternative options found for SI2302DS,215. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2302DS,215, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI2302DS-T1 TRANSISTOR 2800 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, TO-236, 3 PIN, FET General Purpose Small Signal Vishay Siliconix SI2302DS,215 vs SI2302DS-T1
934056632215 TRANSISTOR 2500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC, SMD, SST3, 3 PIN, FET General Purpose Small Signal NXP Semiconductors SI2302DS,215 vs 934056632215
SI2302DS-T1 Small Signal Field-Effect Transistor, 2.8A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TO-236, 3 PIN Vishay Intertechnologies SI2302DS,215 vs SI2302DS-T1
SI2302DS TRANSISTOR 2500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, MINIATURE, PLASTIC PACKAGE-3, FET General Purpose Small Signal NXP Semiconductors SI2302DS,215 vs SI2302DS
SI2302DST/R TRANSISTOR 2500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, MINIATURE, PLASTIC PACKAGE-3, FET General Purpose Small Signal NXP Semiconductors SI2302DS,215 vs SI2302DST/R
SI2302DST/R Small Signal Field-Effect Transistor Nexperia SI2302DS,215 vs SI2302DST/R
Part Number Description Manufacturer Compare
FDN327N_NL Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation SI2302DS,215 vs FDN327N_NL
SI2302ADS-T1 Small Signal Field-Effect Transistor, 2.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TO-236, 3 PIN Vishay Siliconix SI2302DS,215 vs SI2302ADS-T1
ZXMN2A01FTC Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Zetex / Diodes Inc SI2302DS,215 vs ZXMN2A01FTC
SI2302DST/R Small Signal Field-Effect Transistor Nexperia SI2302DS,215 vs SI2302DST/R
SI2302DDS-T1-GE3 Small Signal Field-Effect Transistor, 2.6A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN Vishay Intertechnologies SI2302DS,215 vs SI2302DDS-T1-GE3
FDN327N Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation SI2302DS,215 vs FDN327N
FDN327NS62Z Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation SI2302DS,215 vs FDN327NS62Z
AP2322GN TRANSISTOR 2500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal Advanced Power Electronics Corp SI2302DS,215 vs AP2322GN
SI2302DS-T1 TRANSISTOR 2800 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, TO-236, 3 PIN, FET General Purpose Small Signal Vishay Siliconix SI2302DS,215 vs SI2302DS-T1
ZXMN2A01FTC Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Diodes Incorporated SI2302DS,215 vs ZXMN2A01FTC

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