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Transistors / Small Signal Field-Effect Transistors / SI2302DDS-T1-BE3
Datasheets
SI2302DDS-T1-BE3 by:
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Siliconix
Not Found

Small Signal Field-Effect Transistor, 2.6A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN

Part Details for SI2302DDS-T1-BE3 by Vishay Intertechnologies

Results Overview of SI2302DDS-T1-BE3 by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

SI2302DDS-T1-BE3 Information

SI2302DDS-T1-BE3 by Vishay Intertechnologies is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

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Price & Stock for SI2302DDS-T1-BE3

Part # Distributor Description Stock Price Buy
DISTI # SI2302DDS-T1-BE3
Avnet Americas N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI2302DDS-T1-BE3) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Container: Reel 6000
  • 3,000 $0.1013
  • 6,000 $0.0996
  • 12,000 $0.0981
  • 18,000 $0.0964
  • 24,000 $0.0953
$0.0953 / $0.1013 Buy Now
DISTI # 78-SI2302DDS-T1-BE3
Mouser Electronics MOSFETs SOT23 N CHAN 20V RoHS: Compliant 71991
  • 1 $0.4500
  • 10 $0.2780
  • 100 $0.1320
  • 500 $0.1240
  • 3,000 $0.1050
$0.1050 / $0.4500 Buy Now
DISTI # V36:1790_25500156
Arrow Electronics Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks Date Code: 2331 Americas - 3000
  • 3,000 $0.0988
$0.0988 Buy Now
Future Electronics SI2302DDS Series N-Channel 20 V 2.6 A 0.067 O 3.5 nC SMT - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks Container: Reel 0
Reel
  • 3,000 $0.0854
  • 6,000 $0.0840
  • 12,000 $0.0826
  • 15,000 $0.0822
  • 45,000 $0.0795
$0.0795 / $0.0854 Buy Now
DISTI # 83644377
Verical Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2331 Americas - 3000
  • 3,000 $0.0988
$0.0988 Buy Now
Bristol Electronics   6000
RFQ
Quest Components   4800
  • 1 $0.6650
  • 168 $0.1995
  • 2,006 $0.1330
$0.1330 / $0.6650 Buy Now
DISTI # SI2302DDS-T1-BE3
TTI MOSFETs SOT23 N CHAN 20V RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 18000
In Stock
  • 3,000 $0.1070
  • 6,000 $0.1050
  • 9,000 $0.1030
  • 15,000 $0.1010
  • 24,000 $0.0990
$0.0990 / $0.1070 Buy Now
Vyrian Transistors 16192
RFQ

Part Details for SI2302DDS-T1-BE3

SI2302DDS-T1-BE3 CAD Models

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SI2302DDS-T1-BE3 Part Data Attributes

Parametric Data
SI2302DDS-T1-BE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI2302DDS-T1-BE3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 2.6A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description TO-236, SOT-23, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 17 Weeks
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 2.6 A
Drain-source On Resistance-Max 0.057 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.71 W
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

SI2302DDS-T1-BE3 Frequently Asked Questions (FAQ)

  • A good PCB layout for the SI2302DDS-T1-BE3 should include a large copper area for heat dissipation, with multiple vias connecting the top and bottom layers to reduce thermal resistance. A minimum of 2 oz copper thickness is recommended.

  • To ensure reliable operation in high-temperature environments, ensure proper heat sinking, use a thermally conductive interface material, and follow the recommended derating guidelines for the device. Additionally, consider using a thermal interface material with a high thermal conductivity.

  • The SI2302DDS-T1-BE3 is an ESD-sensitive device. Handle the device by the body or pins, avoid touching the pins, and use an anti-static wrist strap or mat. Store the device in an anti-static bag or container, and follow proper ESD handling procedures during assembly and testing.

  • The SI2302DDS-T1-BE3 is a commercial-grade device, but Vishay Intertechnologies offers a range of high-reliability and aerospace-grade devices. For high-reliability or aerospace applications, consider using a device specifically designed and qualified for those markets, such as the Vishay IHLE series.

  • Follow the recommended soldering profile for the SI2302DDS-T1-BE3, with a peak temperature of 260°C (500°F) for a maximum of 10 seconds. For rework, use a low-temperature soldering iron and a thermal protection device to prevent overheating.