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Part Details for SI2301DS-T1 by Vishay Siliconix
Overview of SI2301DS-T1 by Vishay Siliconix
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SI2301DS-T1
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 13 | 1575 |
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$0.1155 / $0.4125 | Buy Now |
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Bristol Electronics | 11808 |
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RFQ | ||
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Bristol Electronics | Min Qty: 13 | 875 |
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$0.1320 / $0.4125 | Buy Now |
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Bristol Electronics | 12324 |
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RFQ | ||
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Quest Components | MOSFET Transistor, P-Channel, TO-236 | 3673 |
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$0.1300 / $0.3000 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, TO-236 | 9446 |
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$0.1500 / $1.0000 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, TO-236 | 3848 |
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$0.2000 / $1.0000 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, TO-236 | 1913 |
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$0.2000 / $1.0000 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, TO-236 | 1332 |
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$0.3000 / $1.0000 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, TO-236 | 857 |
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$0.3000 / $1.0000 | Buy Now |
Part Details for SI2301DS-T1
SI2301DS-T1 CAD Models
SI2301DS-T1 Part Data Attributes:
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SI2301DS-T1
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI2301DS-T1
Vishay Siliconix
Small Signal Field-Effect Transistor, 2.3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TO-236, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | SOT-23 | |
| Package Description | TO-236, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 2.3 A | |
| Drain-source On Resistance-Max | 0.13 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-236 | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON |