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Transistors / Small Signal Field-Effect Transistors / SI2301BDS-T1-E3
Datasheets
SI2301BDS-T1-E3 by:
Vishay Intertechnologies
Vishay BLH
Vishay Dale
Vishay Huntington
Vishay Intertechnologies
Vishay Siliconix
Not Found

Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN

Part Details for SI2301BDS-T1-E3 by Vishay Intertechnologies

Results Overview of SI2301BDS-T1-E3 by Vishay Intertechnologies

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

SI2301BDS-T1-E3 Information

SI2301BDS-T1-E3 by Vishay Intertechnologies is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SI2301BDS-T1-E3

Part # Distributor Description Stock Price Buy
DISTI # 06J7561
Newark P Channel Mosfet, -20V, 2.2A To-236, Channel Type:P Channel, Drain Source Voltage Vds:20V, Contin... uous Drain Current Id:2.2A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:950Mv Rohs Compliant: Yes |Vishay SI2301BDS-T1-E3 more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 31142
  • 1 $0.1280
$0.1280 Buy Now
DISTI # 35K3452
Newark P Channel Mosfet, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Dra... in Current Id:2.4A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:950Mv Rohs Compliant: Yes |Vishay SI2301BDS-T1-E3 more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.4200
  • 2 $0.3930
  • 4 $0.3660
  • 6 $0.3380
  • 10 $0.3110
$0.3110 / $0.4200 Buy Now
Future Electronics P-CHANNEL 2.5-V (G-S) MOSFET RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.1020
  • 6,000 $0.0999
  • 9,000 $0.0989
  • 15,000 $0.0976
  • 30,000 $0.0950
$0.0950 / $0.1020 Buy Now
Bristol Electronics   Min Qty: 9 4466
  • 9 $0.6000
  • 26 $0.3000
  • 168 $0.1800
  • 835 $0.1200
  • 2,918 $0.0900
$0.0900 / $0.6000 Buy Now
Bristol Electronics   1284
RFQ
Quest Components 2200 MA, 20 V, P-CHANNEL, SI, SMALL SIGNAL, MOSFET, TO-236 4292
  • 1 $0.8000
  • 209 $0.1600
  • 2,501 $0.1200
$0.1200 / $0.8000 Buy Now
Quest Components 2200 MA, 20 V, P-CHANNEL, SI, SMALL SIGNAL, MOSFET, TO-236 3096
  • 1 $0.7200
  • 155 $0.2160
  • 1,853 $0.1440
$0.1440 / $0.7200 Buy Now
Quest Components 2200 MA, 20 V, P-CHANNEL, SI, SMALL SIGNAL, MOSFET, TO-236 1027
  • 1 $0.7200
  • 18 $0.3240
  • 155 $0.2160
$0.2160 / $0.7200 Buy Now
Quest Components 2200 MA, 20 V, P-CHANNEL, SI, SMALL SIGNAL, MOSFET, TO-236 745
  • 1 $0.4760
  • 27 $0.2142
  • 234 $0.1428
$0.1428 / $0.4760 Buy Now
Quest Components 2200 MA, 20 V, P-CHANNEL, SI, SMALL SIGNAL, MOSFET, TO-236 736
  • 1 $0.7200
  • 29 $0.2160
  • 232 $0.1440
$0.1440 / $0.7200 Buy Now
Quest Components 2200 MA, 20 V, P-CHANNEL, SI, SMALL SIGNAL, MOSFET, TO-236 99
  • 1 $1.7000
  • 16 $1.0200
  • 60 $0.8500
$0.8500 / $1.7000 Buy Now
DISTI # SI2301BDS-T1-E3
TTI MOSFETs RECOMMENDED ALT SI23 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 0
  • 3,000 $0.1820
$0.1820 Buy Now
DISTI # SMC-SI2301BDS-T1-E3
Sensible Micro Corporation OEM Excess 5-7 Days Leadtime, We are an AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days Date Code: 2018+ 58
RFQ
Chip 1 Exchange INSTOCK 600
RFQ
DISTI # SI2301BDS-T1-E3
EBV Elektronik Trans MOSFET PCH 20V 22A 3Pin SOT23 TR (Alt: SI2301BDS-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days EBV - 0
Buy Now
MacroQuest Electronics ISO 9001: 2015, ISO 14001:2015, ISO 45001:2018 920
  • 100 $0.1100
  • 250 $0.1000
  • 500 $0.0900
$0.0900 / $0.1100 Buy Now
New Advantage Corporation TRANSISTOR, FET GENERAL PURPOSE PWR RoHS: Compliant Min Qty: 1 Package Multiple: 1 902
  • 25 $0.2000
  • 100 $0.1700
  • 500 $0.1200
  • 1,000 $0.1000
$0.1000 / $0.2000 Buy Now
Vyrian Transistors 34415
RFQ

Part Details for SI2301BDS-T1-E3

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SI2301BDS-T1-E3 Part Data Attributes

Parametric Data
SI2301BDS-T1-E3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI2301BDS-T1-E3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN
Select a part to compare:
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description TO-236, SOT-23, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 2.2 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 65 pF
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

Alternate Parts for SI2301BDS-T1-E3

This table gives cross-reference parts and alternative options found for SI2301BDS-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2301BDS-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
LP2301BLT1G LRC Leshan Radio Co Ltd Check for Price Small Signal Field-Effect Transistor, SI2301BDS-T1-E3 vs LP2301BLT1G
SI2301BDS-T1-GE3 Vishay Siliconix Check for Price TRANSISTOR 2200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN, FET General Purpose Small Signal SI2301BDS-T1-E3 vs SI2301BDS-T1-GE3
SI2301CDS-T1-E3 Vishay Siliconix Check for Price TRANSISTOR 3100 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal SI2301BDS-T1-E3 vs SI2301CDS-T1-E3
SI2301BDS-T1-GE3 Vishay Intertechnologies $0.2532 Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN SI2301BDS-T1-E3 vs SI2301BDS-T1-GE3
Part Number Manufacturer Composite Price Description Compare
SI2301BDS-T1 Vishay Siliconix Check for Price Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN SI2301BDS-T1-E3 vs SI2301BDS-T1
SI2301CDS-T1-E3 Vishay Intertechnologies $0.1551 Small Signal Field-Effect Transistor, 3.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN SI2301BDS-T1-E3 vs SI2301CDS-T1-E3
SI2301BDS-T1-BE3 Vishay Intertechnologies Check for Price Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN SI2301BDS-T1-E3 vs SI2301BDS-T1-BE3
SI2301CDS-T1-BE3 Vishay Intertechnologies Check for Price Small Signal Field-Effect Transistor, 3.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN SI2301BDS-T1-E3 vs SI2301CDS-T1-BE3
SI2301BDS-T1-E3 Vishay Siliconix Check for Price TRANSISTOR 2200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, TO-236, 3 PIN, FET General Purpose Small Signal SI2301BDS-T1-E3 vs SI2301BDS-T1-E3
MCH3377 SANYO Electric Co Ltd Check for Price Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MCPH3, 3 PIN SI2301BDS-T1-E3 vs MCH3377
MCH3377-TL-H onsemi Check for Price Single P-Channel Power MOSFET -20V, -3A, 83mΩ, SC 70FL / MCPH3, 3000-REEL SI2301BDS-T1-E3 vs MCH3377-TL-H
MCH3377-TL-W onsemi Check for Price Single P-Channel Power MOSFET -20V, -3A, 83mΩ, SC 70FL / MCPH3, 3000-REEL SI2301BDS-T1-E3 vs MCH3377-TL-W
APM2301CAC-TRG American Power Devices Inc Check for Price Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN PACKAGE-3 SI2301BDS-T1-E3 vs APM2301CAC-TRG
CPH3350-TL-H onsemi Check for Price P-Channel Power MOSFET, -20V, -3A, 83mΩ, CPH3, 3000-REEL SI2301BDS-T1-E3 vs CPH3350-TL-H

SI2301BDS-T1-E3 Related Parts

SI2301BDS-T1-E3 Frequently Asked Questions (FAQ)

  • A good PCB layout for the SI2301BDS-T1-E3 should include a solid ground plane, wide traces for power and ground, and a thermal relief pattern under the device to facilitate heat dissipation. A minimum of 2 oz copper thickness is recommended.

  • To ensure reliable operation in high-temperature environments, ensure proper heat sinking, use a thermally conductive interface material, and follow the recommended PCB layout guidelines. Additionally, consider derating the device's power handling capabilities according to the temperature derating curve provided in the datasheet.

  • The SI2301BDS-T1-E3 is a sensitive semiconductor device and requires proper ESD protection during handling and assembly. Use an ESD wrist strap or mat, and follow standard ESD handling procedures to prevent damage. The device is also sensitive to moisture, so ensure proper storage and handling to prevent moisture absorption.

  • The SI2301BDS-T1-E3 is a commercial-grade device, but Vishay Intertechnologies offers a range of high-reliability and aerospace-grade devices. For high-reliability or aerospace applications, consider using a device specifically designed and qualified for those markets, such as the Vishay's MIL-PRF-19500 or ESCC-qualified devices.

  • Use a soldering iron with a temperature range of 250°C to 260°C, and a solder with a melting point above 217°C. Follow standard SMT assembly techniques, and ensure the device is properly aligned and secured to the PCB during the assembly process.