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Transistors Small Signal Field-Effect Transistors SI1912EDH-T1-E3

SI1912EDH-T1-E3
Description: Small Signal Field-Effect Transistor, 1.13A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN

Overview of SI1912EDH-T1-E3 by Vishay Intertechnologies

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 1 listing )
  • Number of FFF Equivalents: ( 0 crosses )
  • CAD Models: ( Available )
  • Number of Functional Equivalents: ( 2 crosses )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy

Available Datasheets

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Price & Stock for SI1912EDH-T1-E3 by Vishay Intertechnologies

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   3887
RFQ

CAD Models for SI1912EDH-T1-E3 by Vishay Intertechnologies
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Part Data Attributes for SI1912EDH-T1-E3 by Vishay Intertechnologies
Parametric Data

SI1912EDH-T1-E3
Vishay Intertechnologies
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
SC-70, 6 PIN
Reach Compliance Code
compliant
ECCN Code
EAR99
Samacsys Manufacturer
Vishay
Additional Feature
ESD PROTECTION
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
20 V
Drain Current-Max (ID)
1.13 A
Drain-source On Resistance-Max
0.28 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G6
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
2
Number of Terminals
6
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
0.74 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Matte Tin (Sn)
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. SI1912EDH-T1-E3
    Vishay Intertechnologies
    Small Signal Field-Effect Transistor, 1.13A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN
    VS

Alternate Parts for SI1912EDH-T1-E3

This table gives cross-reference parts and alternative options found for SI1912EDH-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI1912EDH-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
FDG1024NZ Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SC-70, 6 PIN Fairchild Semiconductor Corporation SI1912EDH-T1-E3 vs FDG1024NZ
SI1912EDH-T1-E3 TRANSISTOR 1130 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SC-70, 6 PIN, FET General Purpose Small Signal Vishay Siliconix SI1912EDH-T1-E3 vs SI1912EDH-T1-E3

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