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N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
SI1070X-T1-GE3CT-ND
|
DigiKey | MOSFET N-CH 30V 1.2A SC89-6 Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2149 In Stock |
|
$0.1375 / $0.5800 | Buy Now |
DISTI #
70616137
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RS | SI1070X-T1-GE3 N-channel MOSFET Transistor, 1.2 A, 30 V, 6-Pin SC-89 | Siliconix / Vishay SI1070X-T1-GE3 RoHS: Not Compliant Min Qty: 20 Package Multiple: 1 Container: Bulk | 0 |
|
$0.3960 / $0.4660 | RFQ |
|
Quest Components | 1200MA, 30V, N-CHANNEL, SI, SMALL SIGNAL, MOSFET | 2579 |
|
$0.1294 / $0.3105 | Buy Now |
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SI1070X-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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SI1070X-T1-GE3
Vishay Siliconix
N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel
|
Pbfree Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | SC-89 | |
Package Description | SMALL OUTLINE, R-PDSO-F6 | |
Pin Count | 6 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 1.2 A | |
Drain-source On Resistance-Max | 0.099 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.236 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |