Datasheets
SI1029X-T1-GE3 by:

Trans MOSFET N/P-CH 60V 0.305A/0.19A 6-Pin SOT-563F T/R

Part Details for SI1029X-T1-GE3 by Vishay Siliconix

Overview of SI1029X-T1-GE3 by Vishay Siliconix

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Price & Stock for SI1029X-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # SI1029X-T1-GE3CT-ND
DigiKey MOSFET N/P-CH 60V 0.305A SC89 Min Qty: 1 Lead time: 11 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 14391
In Stock
  • 1 $0.4900
  • 10 $0.4160
  • 100 $0.2889
  • 500 $0.2255
  • 1,000 $0.1833
  • 3,000 $0.1639
  • 6,000 $0.1555
  • 9,000 $0.1444
  • 30,000 $0.1411
$0.1411 / $0.4900 Buy Now
DISTI # 70459642
RS SI1029X-T1-GE3 Dual N/P-channel MOSFET Transistor,0.19 A,0.3 A,60V,6-Pin SC-89 | Siliconix / Vishay SI1029X-T1-GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Container: Bulk 0
  • 3,000 $0.4160
  • 30,000 $0.3950
  • 150,000 $0.3740
  • 300,000 $0.3530
$0.3530 / $0.4160 RFQ
ES Components SILICONIX SI1029X-T1-GE3 3K REEL 0 in Stock
RFQ
New Advantage Corporation Dual N & P Channel 60 V 1.4 / 4 Ohm Surface Mount Mosfet - SC-89-6 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 201000
  • 3,000 $0.1857
  • 201,000 $0.1733
$0.1733 / $0.1857 Buy Now

Part Details for SI1029X-T1-GE3

SI1029X-T1-GE3 CAD Models

SI1029X-T1-GE3 Part Data Attributes

SI1029X-T1-GE3 Vishay Siliconix
Buy Now Datasheet
Compare Parts:
SI1029X-T1-GE3 Vishay Siliconix Trans MOSFET N/P-CH 60V 0.305A/0.19A 6-Pin SOT-563F T/R
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY SILICONIX
Part Package Code SC-89
Package Description SMALL OUTLINE, R-PDSO-F6
Pin Count 6
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Additional Feature LOW THRESHOLD
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.305 A
Drain-source On Resistance-Max 1.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs) 0.28 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI1029X-T1-GE3

This table gives cross-reference parts and alternative options found for SI1029X-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI1029X-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
DMG1029SVQ-7 Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, ULTRA SMALL, PLASTIC PACKAGE-6 Diodes Incorporated SI1029X-T1-GE3 vs DMG1029SVQ-7
Part Number Description Manufacturer Compare
CMLM0708ATR Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, PACKAGE-6 Central Semiconductor Corp SI1029X-T1-GE3 vs CMLM0708ATR
DMG1029SV-7 Small Signal Field-Effect Transistor, 0.37A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, ULTRA SMALL, PLASTIC PACKAGE-6 Diodes Incorporated SI1029X-T1-GE3 vs DMG1029SV-7
DMG1029SVQ-7 Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, ULTRA SMALL, PLASTIC PACKAGE-6 Diodes Incorporated SI1029X-T1-GE3 vs DMG1029SVQ-7
CMLM0708ABK Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, PACKAGE-6 Central Semiconductor Corp SI1029X-T1-GE3 vs CMLM0708ABK

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