Datasheets
SI1026X-T1-GE3 by:

Small Signal Field-Effect Transistor, 0.305A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, MINIATURE, SC-89, 6 PIN

Part Details for SI1026X-T1-GE3 by Vishay Intertechnologies

Overview of SI1026X-T1-GE3 by Vishay Intertechnologies

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Available Datasheets

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Price & Stock for SI1026X-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 29X0510
Newark Mosfet, N Channel, 60V, 0.305A, Sc-89-6, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds N Channel:60V, Drain Source Voltage Vds P Channel:60V, Continuous Drain Current Id N Channel:305Ma, No. Of Pins:6Pins Rohs Compliant: Yes |Vishay SI1026X-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.1940
  • 5,000 $0.1900
  • 10,000 $0.1750
  • 20,000 $0.1630
  • 30,000 $0.1520
  • 50,000 $0.1460
$0.1460 / $0.1940 Buy Now
DISTI # 16P3678
Newark Mosfet, N Channel, 60V, 0.305A, Sc-89-6, Channel Type:N Channel, Drain Source Voltage Vds N Channel:60V, Drain Source Voltage Vds P Channel:60V, Continuous Drain Current Id N Channel:305Ma, Continuous Drain Current Id P Channel:305Marohs Compliant: Yes |Vishay SI1026X-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 500 $0.2370
$0.2370 Buy Now
DISTI # SI1026X-T1-GE3
Avnet Americas Transistor MOSFET Array Dual N-CH 60V 305mA 6-Pin SOT-563F T/R - Tape and Reel (Alt: SI1026X-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.1823
  • 6,000 $0.1353
  • 12,000 $0.1332
  • 18,000 $0.1310
  • 24,000 $0.1294
$0.1294 / $0.1823 Buy Now
DISTI # 781-SI1026X-T1-GE3
Mouser Electronics MOSFETs 60V Vds 20V Vgs SC89-6 RoHS: Compliant 36943
  • 1 $0.5400
  • 10 $0.3870
  • 100 $0.2850
  • 3,000 $0.2420
  • 45,000 $0.1340
$0.1340 / $0.5400 Buy Now
DISTI # V36:1790_09215313
Arrow Electronics Trans MOSFET N-CH 60V 0.305A 6-Pin SC-89 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks Date Code: 2414 Americas - 3000
  • 1 $0.1320
$0.1320 Buy Now
Future Electronics Single N-Channel 60 V 3 Ω 250 mW Surface Mount Power Mosfet - SC-89-6 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks Container: Reel 15000
Reel
  • 3,000 $0.1370
  • 6,000 $0.1340
  • 9,000 $0.1330
  • 15,000 $0.1310
  • 30,000 $0.1270
$0.1270 / $0.1370 Buy Now
Future Electronics Single N-Channel 60 V 3 Ω 250 mW Surface Mount Power Mosfet - SC-89-6 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 6000
Reel
  • 3,000 $0.1320
  • 6,000 $0.1300
  • 9,000 $0.1280
  • 15,000 $0.1260
  • 30,000 $0.1230
$0.1230 / $0.1320 Buy Now
DISTI # 83628168
Verical Trans MOSFET N-CH 60V 0.305A 6-Pin SC-89 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2414 Americas - 3000
  • 3,000 $0.1320
$0.1320 Buy Now
Bristol Electronics   4336
RFQ
Quest Components   3468
  • 1 $0.5400
  • 186 $0.2700
  • 742 $0.2160
$0.2160 / $0.5400 Buy Now
Quest Components   64
  • 1 $0.9800
  • 6 $0.4900
  • 21 $0.2940
$0.2940 / $0.9800 Buy Now
DISTI # SI1026X-T1-GE3
TTI MOSFETs 60V Vds 20V Vgs SC89-6 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 54000
In Stock
  • 3,000 $0.1410
  • 6,000 $0.1350
  • 9,000 $0.1320
$0.1320 / $0.1410 Buy Now
DISTI # SI1026X-T1-GE3
TME Transistor: N-MOSFET x2, unipolar, 60V, 0.22A, 0.13W, SC89,SOT563 Min Qty: 1 0
  • 1 $0.4600
  • 10 $0.4120
  • 50 $0.3260
  • 100 $0.2860
  • 500 $0.2080
  • 1,000 $0.1840
  • 1,500 $0.1720
  • 3,000 $0.1560
  • 9,000 $0.1550
$0.1550 / $0.4600 RFQ
ComSIT USA N-CHANNEL 60 V (D-S) MOSFET Small Signal Field-Effect Transistor, 0.305A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant Stock EU - 3000
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
DISTI # SI1026X-T1-GE3
IBS Electronics SI1026X-T1-GE3 Dual N-channel MOSFET Transistor, 0.3 A, 60 V, 6-Pin SC-89 Min Qty: 630 Package Multiple: 1 1900
  • 630 $0.8600
$0.8600 Buy Now
Chip-Germany GmbH   RoHS: Not Compliant 2895
RFQ
CHIPMALL.COM LIMITED 60V 305mA 1.4@10V,500mA 250mW 2.5V@250uA N Channel SC-89 MOSFETs ROHS 5583
  • 5 $0.2671
  • 50 $0.2172
  • 150 $0.1958
  • 500 $0.1691
  • 3,000 $0.1573
  • 6,000 $0.1501
$0.1501 / $0.2671 Buy Now
DISTI # SI1026X-T1-GE3
EBV Elektronik Transistor MOSFET Array Dual N-CH 60V 305mA 6-Pin SOT-563F T/R (Alt: SI1026X-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days EBV - 0
Buy Now
LCSC 60V 305mA 1.410V500mA 250mW 2.5V250uA 2 N-Channel SC-89 MOSFETs ROHS 5433
  • 5 $0.2534
  • 50 $0.2014
  • 150 $0.1791
  • 500 $0.1513
  • 3,000 $0.1389
  • 6,000 $0.1314
$0.1314 / $0.2534 Buy Now

Part Details for SI1026X-T1-GE3

SI1026X-T1-GE3 CAD Models

SI1026X-T1-GE3 Part Data Attributes

SI1026X-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI1026X-T1-GE3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 0.305A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, MINIATURE, SC-89, 6 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT, MINIATURE, SC-89, 6 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 13 Weeks
Samacsys Manufacturer Vishay
Additional Feature LOW THRESHOLD
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.305 A
Drain-source On Resistance-Max 1.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.28 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI1026X-T1-GE3

This table gives cross-reference parts and alternative options found for SI1026X-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI1026X-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI1026X-T1-E3 Small Signal Field-Effect Transistor, 0.305A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, MINIATURE, SC-89, 6 PIN Vishay Siliconix SI1026X-T1-GE3 vs SI1026X-T1-E3

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