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Transistors / Small Signal Field-Effect Transistors / SI1026X-T1-GE3
Datasheets
SI1026X-T1-GE3 by:
Vishay Intertechnologies
Vishay Huntington
Vishay Intertechnologies
Vishay Siliconix
Not Found

Small Signal Field-Effect Transistor, 0.305A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, MINIATURE, SC-89, 6 PIN

Part Details for SI1026X-T1-GE3 by Vishay Intertechnologies

Results Overview of SI1026X-T1-GE3 by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

SI1026X-T1-GE3 Information

SI1026X-T1-GE3 by Vishay Intertechnologies is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Available Datasheets

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Price & Stock for SI1026X-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 29X0510
Newark Mosfet, N Channel, 60V, 0.305A, Sc-89-6, Full Reel, Channel Type:N Channel, Drain Source Voltage V... ds N Channel:60V, Drain Source Voltage Vds P Channel:60V, Continuous Drain Current Id N Channel:305Ma, No. Of Pins:6Pins Rohs Compliant: Yes |Vishay SI1026X-T1-GE3 more RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.1940
  • 5,000 $0.1900
  • 10,000 $0.1750
  • 20,000 $0.1630
  • 30,000 $0.1520
  • 50,000 $0.1460
$0.1460 / $0.1940 Buy Now
DISTI # 16P3678
Newark Mosfet, N Channel, 60V, 0.305A, Sc-89-6, Channel Type:N Channel, Drain Source Voltage Vds N Channe... l:60V, Drain Source Voltage Vds P Channel:60V, Continuous Drain Current Id N Channel:305Ma, Continuous Drain Current Id P Channel:305Marohs Compliant: Yes |Vishay SI1026X-T1-GE3 more RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 1,000 $0.2090
$0.2090 Buy Now
DISTI # SI1026X-T1-GE3
Avnet Americas Transistor MOSFET Array Dual N-CH 60V 305mA 6-Pin SOT-563F T/R - Tape and Reel (Alt: SI1026X-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.1375
  • 6,000 $0.1353
  • 12,000 $0.1332
  • 18,000 $0.1310
  • 24,000 $0.1294
$0.1294 / $0.1375 Buy Now
DISTI # 781-SI1026X-T1-GE3
Mouser Electronics MOSFETs 60V Vds 20V Vgs SC89-6 RoHS: Compliant 31514
  • 1 $0.6500
  • 10 $0.4420
  • 100 $0.3060
  • 500 $0.2330
  • 1,000 $0.1980
  • 3,000 $0.1530
  • 6,000 $0.1460
  • 9,000 $0.1420
$0.1420 / $0.6500 Buy Now
DISTI # E02:0323_00529804
Arrow Electronics Trans MOSFET N-CH 60V 0.305A 6-Pin SC-89 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks Date Code: 2450 Europe - 12000
  • 3,000 $0.1451
  • 6,000 $0.1390
  • 9,000 $0.1375
  • 24,000 $0.1361
  • 45,000 $0.1355
$0.1355 / $0.1451 Buy Now
Future Electronics Single N-Channel 60 V 3 Ω 250 mW Surface Mount Power Mosfet - SC-89-6 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 3000
Reel
  • 3,000 $0.1440
  • 6,000 $0.1430
  • 9,000 $0.1420
  • 12,000 $0.1410
  • 15,000 $0.1390
$0.1390 / $0.1440 Buy Now
Future Electronics Single N-Channel 60 V 3 Ω 250 mW Surface Mount Power Mosfet - SC-89-6 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks Container: Reel 0
Reel
  • 3,000 $0.1440
  • 6,000 $0.1430
  • 9,000 $0.1420
  • 12,000 $0.1410
  • 15,000 $0.1390
$0.1390 / $0.1440 Buy Now
DISTI # 87556784
Verical Trans MOSFET N-CH 60V 0.305A 6-Pin SC-89 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2450 Americas - 12000
  • 3,000 $0.1458
  • 6,000 $0.1397
  • 9,000 $0.1382
  • 24,000 $0.1367
  • 45,000 $0.1361
$0.1361 / $0.1458 Buy Now
Bristol Electronics   4336
RFQ
Quest Components   3468
  • 1 $0.5400
  • 186 $0.2700
  • 742 $0.2160
$0.2160 / $0.5400 Buy Now
Quest Components   64
  • 1 $0.9800
  • 6 $0.4900
  • 21 $0.2940
$0.2940 / $0.9800 Buy Now
DISTI # SI1026X-T1-GE3
TTI MOSFETs 60V Vds 20V Vgs SC89-6 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 42000
In Stock
  • 3,000 $0.1330
  • 6,000 $0.1300
  • 9,000 $0.1270
  • 15,000 $0.1250
$0.1250 / $0.1330 Buy Now
DISTI # SI1026X-T1-GE3
TME Transistor: N-MOSFET x2, unipolar, 60V, 0.22A, 0.13W, SC89,SOT563 Min Qty: 1 0
  • 1 $0.4330
  • 10 $0.3880
  • 50 $0.3070
  • 100 $0.2690
  • 500 $0.1960
  • 1,000 $0.1730
  • 1,500 $0.1620
  • 3,000 $0.1470
  • 9,000 $0.1460
$0.1460 / $0.4330 RFQ
ComSIT USA N-CHANNEL 60 V (D-S) MOSFET Small Signal Field-Effect Transistor, 0.305A I(D), 60V, 2-Element, N-Cha... nnel, Silicon, Metal-oxide Semiconductor FET more RoHS: Compliant ECCN: EAR99 Stock DE - 3000
Stock ES - 0
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
DISTI # SI1026X-T1-GE3
EBV Elektronik Transistor MOSFET Array Dual NCH 60V 305mA 6Pin SOT563F TR (Alt: SI1026X-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days EBV - 0
Buy Now
LCSC 60V 500mA 1.410V500mA 145mW 2.5V 2 N-Channel SC-89 MOSFETs ROHS 5125
  • 5 $0.2853
  • 50 $0.2242
  • 150 $0.1980
  • 500 $0.1653
  • 3,000 $0.1508
  • 6,000 $0.1420
$0.1420 / $0.2853 Buy Now
Vyrian Transistors 53905
RFQ

Part Details for SI1026X-T1-GE3

SI1026X-T1-GE3 CAD Models

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SI1026X-T1-GE3 Part Data Attributes

Parametric Data
SI1026X-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI1026X-T1-GE3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 0.305A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, MINIATURE, SC-89, 6 PIN
Select a part to compare:
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT, MINIATURE, SC-89, 6 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 13 Weeks
Samacsys Manufacturer Vishay
Additional Feature LOW THRESHOLD
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.305 A
Drain-source On Resistance-Max 1.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.28 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI1026X-T1-GE3

This table gives cross-reference parts and alternative options found for SI1026X-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI1026X-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
SI1026X-T1 Vishay Siliconix Check for Price Small Signal Field-Effect Transistor, 0.305A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIATURE, SC-89, 6 PIN SI1026X-T1-GE3 vs SI1026X-T1

SI1026X-T1-GE3 Related Parts

SI1026X-T1-GE3 Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for the SI1026X-T1-GE3 is a standard SOT23-6 package with a 1.3mm x 1.3mm body size and a 0.5mm pitch. The datasheet provides a recommended land pattern and soldering guidelines.

  • To ensure reliability in high-temperature applications, follow the recommended operating conditions and derating guidelines in the datasheet. Additionally, consider using a thermal pad or heat sink to dissipate heat, and ensure good airflow around the device.

  • The maximum allowed voltage on the enable pin (EN) of the SI1026X-T1-GE3 is the same as the maximum supply voltage (VIN), which is 6.5V. Exceeding this voltage may damage the device.

  • Yes, the SI1026X-T1-GE3 is suitable for switching regulator applications due to its high-frequency capability and low RDS(on). However, ensure that the device is properly bypassed and decoupled to minimize noise and voltage spikes.

  • To calculate the power dissipation of the SI1026X-T1-GE3, use the equation: Pd = (VIN x IIN) + (VDS x IDS). Where VIN is the input voltage, IIN is the input current, VDS is the drain-source voltage, and IDS is the drain-source current. Refer to the datasheet for thermal resistance and junction-to-ambient thermal resistance values.