Part Details for SGW5N60RUF by Fairchild Semiconductor Corporation
Overview of SGW5N60RUF by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for SGW5N60RUF
SGW5N60RUF CAD Models
SGW5N60RUF Part Data Attributes:
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SGW5N60RUF
Fairchild Semiconductor Corporation
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Datasheet
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SGW5N60RUF
Fairchild Semiconductor Corporation
Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-263AB, D2PAK-3
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | D2PAK | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | LOW CONDUCTION LOSS, HIGH SPEED SWITCHING | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 8 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE | |
Fall Time-Max (tf) | 280 ns | |
Gate-Emitter Thr Voltage-Max | 8 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 60 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 290 ns | |
Turn-on Time-Nom (ton) | 39 ns |
Alternate Parts for SGW5N60RUF
This table gives cross-reference parts and alternative options found for SGW5N60RUF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SGW5N60RUF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SGP5N60RUFD | Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN | Samsung Semiconductor | SGW5N60RUF vs SGP5N60RUFD |
GT25Q101 | TRANSISTOR 25 A, 1200 V, N-CHANNEL IGBT, TO-3PL, TO-3PL, 3 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | SGW5N60RUF vs GT25Q101 |
HGT1S12N60B3S9A | Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB, | Fairchild Semiconductor Corporation | SGW5N60RUF vs HGT1S12N60B3S9A |
HGTP20N60C3R | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB | Harris Semiconductor | SGW5N60RUF vs HGTP20N60C3R |
IRG4BC20FD-STRL | Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 | International Rectifier | SGW5N60RUF vs IRG4BC20FD-STRL |
IXGH36N60A3D4 | Insulated Gate Bipolar Transistor, | Littelfuse Inc | SGW5N60RUF vs IXGH36N60A3D4 |
IRGPS40B120U | Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, TO-274AA, SUPER-247, 3 PIN | Infineon Technologies AG | SGW5N60RUF vs IRGPS40B120U |
SGP5N60RUF | Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN | Samsung Semiconductor | SGW5N60RUF vs SGP5N60RUF |
IRG4PC40UD | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | Infineon Technologies AG | SGW5N60RUF vs IRG4PC40UD |
IXSH10N120A | Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | SGW5N60RUF vs IXSH10N120A |