Datasheets
SGW5N60RUF by:

Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-263AB, D2PAK-3

Part Details for SGW5N60RUF by Fairchild Semiconductor Corporation

Overview of SGW5N60RUF by Fairchild Semiconductor Corporation

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Part Details for SGW5N60RUF

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SGW5N60RUF Part Data Attributes:

SGW5N60RUF Fairchild Semiconductor Corporation
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SGW5N60RUF Fairchild Semiconductor Corporation Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-263AB, D2PAK-3
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
Case Connection COLLECTOR
Collector Current-Max (IC) 8 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Fall Time-Max (tf) 280 ns
Gate-Emitter Thr Voltage-Max 8 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 60 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 290 ns
Turn-on Time-Nom (ton) 39 ns

Alternate Parts for SGW5N60RUF

This table gives cross-reference parts and alternative options found for SGW5N60RUF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SGW5N60RUF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SGP5N60RUFD Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN Samsung Semiconductor SGW5N60RUF vs SGP5N60RUFD
GT25Q101 TRANSISTOR 25 A, 1200 V, N-CHANNEL IGBT, TO-3PL, TO-3PL, 3 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components SGW5N60RUF vs GT25Q101
HGT1S12N60B3S9A Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB, Fairchild Semiconductor Corporation SGW5N60RUF vs HGT1S12N60B3S9A
HGTP20N60C3R Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB Harris Semiconductor SGW5N60RUF vs HGTP20N60C3R
IRG4BC20FD-STRL Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 International Rectifier SGW5N60RUF vs IRG4BC20FD-STRL
IXGH36N60A3D4 Insulated Gate Bipolar Transistor, Littelfuse Inc SGW5N60RUF vs IXGH36N60A3D4
IRGPS40B120U Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, TO-274AA, SUPER-247, 3 PIN Infineon Technologies AG SGW5N60RUF vs IRGPS40B120U
SGP5N60RUF Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN Samsung Semiconductor SGW5N60RUF vs SGP5N60RUF
IRG4PC40UD Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN Infineon Technologies AG SGW5N60RUF vs IRG4PC40UD
IXSH10N120A Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation SGW5N60RUF vs IXSH10N120A

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