Part Details for SGW20N60HS by Infineon Technologies AG
Overview of SGW20N60HS by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Electronic Manufacturing
Price & Stock for SGW20N60HS
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-SGW20N60HS-ND
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DigiKey | IGBT NPT 600V 36A TO247-3 Min Qty: 154 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
1530 In Stock |
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$1.9600 | Buy Now |
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Rochester Electronics | SGW20N60 - Discrete IGBT without Anti-Parallel Diode RoHS: Compliant Status: Obsolete Min Qty: 1 | 1530 |
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$1.6700 / $1.9700 | Buy Now |
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Chip1Cloud | High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation | 32500 |
|
RFQ |
Part Details for SGW20N60HS
SGW20N60HS CAD Models
SGW20N60HS Part Data Attributes
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SGW20N60HS
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SGW20N60HS
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 36A I(C), 600V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-247AC | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 36 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE | |
| Gate-Emitter Thr Voltage-Max | 5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 178 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 235 ns | |
| Turn-on Time-Nom (ton) | 30 ns |
Alternate Parts for SGW20N60HS
This table gives cross-reference parts and alternative options found for SGW20N60HS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SGW20N60HS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXSH30N60 | Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | SGW20N60HS vs IXSH30N60 |
| IRGPC30FD2 | Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN | International Rectifier | SGW20N60HS vs IRGPC30FD2 |
| APT12GT60KR | Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN | Microsemi Corporation | SGW20N60HS vs APT12GT60KR |
| IRG4PC40SPBF | Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN | Infineon Technologies AG | SGW20N60HS vs IRG4PC40SPBF |
| IRG4PC40KD | Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | Infineon Technologies AG | SGW20N60HS vs IRG4PC40KD |
| HGT1S12N60C3R | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-262AA, PLASTIC PACKAGE-3 | Harris Semiconductor | SGW20N60HS vs HGT1S12N60C3R |
| GT8Q101 | TRANSISTOR 8 A, 1200 V, N-CHANNEL IGBT, TO-3PN, TO-3PN, 3 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | SGW20N60HS vs GT8Q101 |
| IRG4BC15UDPBF | Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 | Infineon Technologies AG | SGW20N60HS vs IRG4BC15UDPBF |
| SGP6N60UFD | Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN | Samsung Semiconductor | SGW20N60HS vs SGP6N60UFD |
| IRG4BC30U-S | Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, D2PAK-3 | International Rectifier | SGW20N60HS vs IRG4BC30U-S |