Datasheets
SGW13N60UF by:

Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-263AB, D2PAK-3

Part Details for SGW13N60UF by Fairchild Semiconductor Corporation

Overview of SGW13N60UF by Fairchild Semiconductor Corporation

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Part Details for SGW13N60UF

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SGW13N60UF Part Data Attributes

SGW13N60UF Fairchild Semiconductor Corporation
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SGW13N60UF Fairchild Semiconductor Corporation Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-263AB, D2PAK-3
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
Case Connection COLLECTOR
Collector Current-Max (IC) 13 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Fall Time-Max (tf) 220 ns
Gate-Emitter Thr Voltage-Max 7.5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 60 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 253 ns
Turn-on Time-Nom (ton) 62 ns

Alternate Parts for SGW13N60UF

This table gives cross-reference parts and alternative options found for SGW13N60UF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SGW13N60UF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
1MB20D-060 Insulated Gate Bipolar Transistor, 38A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN Fuji Electric Co Ltd SGW13N60UF vs 1MB20D-060
SGP13N60UF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation SGW13N60UF vs SGP13N60UF
HGTG30N60C3 Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247 Fairchild Semiconductor Corporation SGW13N60UF vs HGTG30N60C3
HGTP12N60D1 Insulated Gate Bipolar Transistor, 21A I(C), 600V V(BR)CES, N-Channel, TO-220AB Fairchild Semiconductor Corporation SGW13N60UF vs HGTP12N60D1
SGB15N60HS Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, D2PAK-3 Infineon Technologies AG SGW13N60UF vs SGB15N60HS
APT30GP60SG Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, D3PAK, 3 PIN Microsemi Corporation SGW13N60UF vs APT30GP60SG
MGP14N60E 18A, 600V, N-CHANNEL IGBT, TO-220AB, CASE 221A-09, 3 PIN onsemi SGW13N60UF vs MGP14N60E
IRG4BC20W-S Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 Infineon Technologies AG SGW13N60UF vs IRG4BC20W-S
IXDA20N120AS Insulated Gate Bipolar Transistor, 34A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, D2PAK-3 IXYS Corporation SGW13N60UF vs IXDA20N120AS
SGW15N120 Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN Infineon Technologies AG SGW13N60UF vs SGW15N120

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