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SGS10N60RUFDTU by:

Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220F, 3 PIN

Part Details for SGS10N60RUFDTU by Fairchild Semiconductor Corporation

Overview of SGS10N60RUFDTU by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for SGS10N60RUFDTU

Part # Distributor Description Stock Price Buy
Chip1Cloud Trans IGBT Chip N-CH 600V 16A 55000mW 3-Pin(3+Tab) TO-220FP Tube / IGBT 600V 16A 55W TO220F 4200
RFQ

Part Details for SGS10N60RUFDTU

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SGS10N60RUFDTU Part Data Attributes

SGS10N60RUFDTU Fairchild Semiconductor Corporation
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SGS10N60RUFDTU Fairchild Semiconductor Corporation Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220F, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-220F
Package Description TO-220F, 3 PIN
Pin Count 3
Manufacturer Package Code TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
Case Connection ISOLATED
Collector Current-Max (IC) 16 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 220 ns
Gate-Emitter Thr Voltage-Max 8 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 35 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 284 ns
Turn-on Time-Nom (ton) 49 ns

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