Part Details for SGH30N60RUF by Fairchild Semiconductor Corporation
Overview of SGH30N60RUF by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Part Details for SGH30N60RUF
SGH30N60RUF CAD Models
SGH30N60RUF Part Data Attributes
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SGH30N60RUF
Fairchild Semiconductor Corporation
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Datasheet
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SGH30N60RUF
Fairchild Semiconductor Corporation
Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-3P | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW CONDUCTION LOSS, HIGH SPEED SWITCHING | |
| Collector Current-Max (IC) | 48 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE | |
| Fall Time-Max (tf) | 200 ns | |
| Gate-Emitter Thr Voltage-Max | 8.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 235 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 341 ns | |
| Turn-on Time-Nom (ton) | 101 ns |
Alternate Parts for SGH30N60RUF
This table gives cross-reference parts and alternative options found for SGH30N60RUF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SGH30N60RUF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| GT15H101 | TRANSISTOR 15 A, 500 V, N-CHANNEL IGBT, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | SGH30N60RUF vs GT15H101 |
| IRGPC50S | Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN | International Rectifier | SGH30N60RUF vs IRGPC50S |
| SGH20N60RUFD | Insulated Gate Bipolar Transistor, 32A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN | Samsung Semiconductor | SGH30N60RUF vs SGH20N60RUFD |
| IHW20T120 | Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN | Infineon Technologies AG | SGH30N60RUF vs IHW20T120 |
| HGT1S3N60B3DS | Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-263AB, | Fairchild Semiconductor Corporation | SGH30N60RUF vs HGT1S3N60B3DS |
| IXSH35N100A | Insulated Gate Bipolar Transistor, 70A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | SGH30N60RUF vs IXSH35N100A |
| IRG4IBC20UD | Insulated Gate Bipolar Transistor, 11.4A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, FULL PACK-3 | Infineon Technologies AG | SGH30N60RUF vs IRG4IBC20UD |
| IRG4PC30KD | Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | Infineon Technologies AG | SGH30N60RUF vs IRG4PC30KD |
| IKA06N60TXKSA1 | Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SGH30N60RUF vs IKA06N60TXKSA1 |
| SGP20N60HSXKSA1 | Insulated Gate Bipolar Transistor, 36A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SGH30N60RUF vs SGP20N60HSXKSA1 |