Part Details for SGH20N120RUFDTU by Fairchild Semiconductor Corporation
Overview of SGH20N120RUFDTU by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for SGH20N120RUFDTU
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | Insulated Gate Bipolar Transistor, 32A, 1200V, N-Channel ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 9 |
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$3.6000 / $4.2300 | Buy Now |
Part Details for SGH20N120RUFDTU
SGH20N120RUFDTU CAD Models
SGH20N120RUFDTU Part Data Attributes
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SGH20N120RUFDTU
Fairchild Semiconductor Corporation
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Datasheet
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SGH20N120RUFDTU
Fairchild Semiconductor Corporation
Insulated Gate Bipolar Transistor, 32A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-3P | |
Package Description | TO-3P, 3 PIN | |
Pin Count | 2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | LOW CONDUCTION LOSS, HIGH SPEED SWITCHING | |
Collector Current-Max (IC) | 32 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 200 ns | |
Gate-Emitter Thr Voltage-Max | 7.5 V | |
Gate-Emitter Voltage-Max | 25 V | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 230 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 290 ns | |
Turn-on Time-Nom (ton) | 100 ns |
Alternate Parts for SGH20N120RUFDTU
This table gives cross-reference parts and alternative options found for SGH20N120RUFDTU. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SGH20N120RUFDTU, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SGH15N120RUFTU | Insulated Gate Bipolar Transistor, 24A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN | Fairchild Semiconductor Corporation | SGH20N120RUFDTU vs SGH15N120RUFTU |
FGB20N6S2DT | Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-263AB, TO-263AB, 3 PIN | Fairchild Semiconductor Corporation | SGH20N120RUFDTU vs FGB20N6S2DT |
FGB20N6S2D | Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-263AB, TO-263AB, 3 PIN | Fairchild Semiconductor Corporation | SGH20N120RUFDTU vs FGB20N6S2D |
HGT1S7N60C3D | Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA | Harris Semiconductor | SGH20N120RUFDTU vs HGT1S7N60C3D |
SGS6N60UFTU | Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220F, 3 PIN | Fairchild Semiconductor Corporation | SGH20N120RUFDTU vs SGS6N60UFTU |
SGS6N60UF | Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220F, 3 PIN | Fairchild Semiconductor Corporation | SGH20N120RUFDTU vs SGS6N60UF |
HGT1S7N60C3D | Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA, TO-262, 3PIN | Fairchild Semiconductor Corporation | SGH20N120RUFDTU vs HGT1S7N60C3D |
SGS6N60UFD | Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220F, 3 PIN | Fairchild Semiconductor Corporation | SGH20N120RUFDTU vs SGS6N60UFD |
STGD3NB60HD | 10A, 600V, N-CHANNEL IGBT, TO-252AA, DPAK-3 | STMicroelectronics | SGH20N120RUFDTU vs STGD3NB60HD |
SGH20N60RUFTU | Insulated Gate Bipolar Transistor, 32A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN | Fairchild Semiconductor Corporation | SGH20N120RUFDTU vs SGH20N60RUFTU |