Part Details for SGB10N60AATMA1 by Infineon Technologies AG
Overview of SGB10N60AATMA1 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SGB10N60AATMA1
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | SGB10N60 - Discrete IGBT without Anti-Parallel Diode ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 163 |
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$0.9421 / $1.1100 | Buy Now |
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Chip1Cloud | IGBT 600V 20A 92W TO263-3 / Trans IGBT Chip N-CH 600V 20A 92000mW 3-Pin(2+Tab) D2PAK T/R | 9200 |
|
RFQ |
Part Details for SGB10N60AATMA1
SGB10N60AATMA1 CAD Models
SGB10N60AATMA1 Part Data Attributes:
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SGB10N60AATMA1
Infineon Technologies AG
Buy Now
Datasheet
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SGB10N60AATMA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC PACKAGE-3
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | D2PAK | |
Package Description | GREEN, PLASTIC PACKAGE-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Additional Feature | LOW CONDUCTION LOSS | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 20 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 224 ns | |
Turn-on Time-Nom (ton) | 40 ns |