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Transistors / IGBTs / SGB04N60
Datasheets
SGB04N60 by:

Insulated Gate Bipolar Transistor, 9.4A I(C), 600V V(BR)CES, N-Channel, TO-263AB

Part Details for SGB04N60 by Siemens

Overview of SGB04N60 by Siemens

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for SGB04N60

Part # Distributor Description Stock Price Buy
Quest Components 9.4 A, 600 V, N-CHANNEL IGBT, TO-263AB 974
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Part Details for SGB04N60

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SGB04N60 Part Data Attributes

Parametric Data
SGB04N60 Siemens
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SGB04N60 Siemens Insulated Gate Bipolar Transistor, 9.4A I(C), 600V V(BR)CES, N-Channel, TO-263AB
Part Life Cycle Code Transferred
Ihs Manufacturer SIEMENS A G
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS, FAST
Case Connection COLLECTOR
Collector Current-Max (IC) 9.4 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 368 ns
Turn-on Time-Nom (ton) 36 ns

Alternate Parts for SGB04N60

This table gives cross-reference parts and alternative options found for SGB04N60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SGB04N60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HGT1S12N60B3DS 27A, 600V, N-CHANNEL IGBT, TO-263AB Intersil Corporation SGB04N60 vs HGT1S12N60B3DS
HGTG30N120CN 30A, 1200V, N-CHANNEL IGBT, TO-247 Intersil Corporation SGB04N60 vs HGTG30N120CN
HGTG27N120BN Insulated Gate Bipolar Transistor, 72A I(C), 1200V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN Fairchild Semiconductor Corporation SGB04N60 vs HGTG27N120BN
IRG4IBC30KDPBF Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PAK-3 International Rectifier SGB04N60 vs IRG4IBC30KDPBF
SGP04N60 Insulated Gate Bipolar Transistor, 9.4A I(C), 600V V(BR)CES, N-Channel, TO-220AB Siemens SGB04N60 vs SGP04N60
SKW30N60FKSA1 Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG SGB04N60 vs SKW30N60FKSA1
IRG4PH30KPBF Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3 International Rectifier SGB04N60 vs IRG4PH30KPBF
IRG4PF50WDPBF Insulated Gate Bipolar Transistor, 51A I(C), 900V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier SGB04N60 vs IRG4PF50WDPBF
IRG4PSC71KPBF Insulated Gate Bipolar Transistor, 85A I(C), 600V V(BR)CES, N-Channel, SUPER-247, 3 PIN International Rectifier SGB04N60 vs IRG4PSC71KPBF
GT80J101 TRANSISTOR 80 A, 600 V, N-CHANNEL IGBT, TO-3PL, TO-3PL, 3 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components SGB04N60 vs GT80J101

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