Part Details for SG2012L/883B by Linfinity Microelectronics
Overview of SG2012L/883B by Linfinity Microelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Security and Surveillance
Medical Imaging
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| ICL8212MTY/B | Rochester Electronics LLC | Replacement for Intersil part number ICL8212MTY/883B. Buy from authorized manufacturer Rochester Electronics. | |
| 79M06ML/B | Rochester Electronics LLC | Replacement for Texas Instruments part number UA79M06MLA/883B. Buy from authorized manufacturer Rochester Electronics. | |
| IH5143MJE/883B | Rochester Electronics LLC | SPDT, 2 Func, 1 Channel, CMOS, CDIP16, |
Part Details for SG2012L/883B
SG2012L/883B CAD Models
SG2012L/883B Part Data Attributes
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SG2012L/883B
Linfinity Microelectronics
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Datasheet
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SG2012L/883B
Linfinity Microelectronics
Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon,
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | LINFINITY MICROELECTRONICS | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Collector Current-Max (IC) | 0.6 A | |
| Collector-Emitter Voltage-Max | 50 V | |
| Configuration | 7 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
| JESD-30 Code | S-CQCC-N20 | |
| JESD-609 Code | e0 | |
| Number of Elements | 7 | |
| Number of Terminals | 20 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | SQUARE | |
| Package Style | CHIP CARRIER | |
| Polarity/Channel Type | NPN | |
| Qualification Status | Not Qualified | |
| Reference Standard | MIL | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | NO LEAD | |
| Terminal Position | QUAD | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| VCEsat-Max | 1.9 V |