Datasheets
SF800N26 by: Toshiba America Electronic Components

Silicon Controlled Rectifier, 1260 A, 1000 V, SCR

Part Details for SF800N26 by Toshiba America Electronic Components

Overview of SF800N26 by Toshiba America Electronic Components

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Part Details for SF800N26

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SF800N26 Part Data Attributes

SF800N26 Toshiba America Electronic Components
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SF800N26 Toshiba America Electronic Components Silicon Controlled Rectifier, 1260 A, 1000 V, SCR
Part Life Cycle Code Obsolete
Ihs Manufacturer TOSHIBA CORP
Package Description DISK BUTTON, O-CEDB-N2
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.30.00.80
Configuration SINGLE
Critical Rate of Rise of Off-State Voltage-Min 500 V/us
DC Gate Trigger Current-Max 320 mA
DC Gate Trigger Voltage-Max 4 V
Holding Current-Max 300 mA
JESD-30 Code O-CEDB-N2
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 125 °C
Operating Temperature-Min -40 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style DISK BUTTON
Qualification Status Not Qualified
RMS On-state Current-Max 1260 A
Repetitive Peak Off-state Leakage Current-Max 35000 µA
Repetitive Peak Off-state Voltage 1000 V
Repetitive Peak Reverse Voltage 1000 V
Surface Mount YES
Terminal Form NO LEAD
Terminal Position END
Trigger Device Type SCR

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