Datasheets
SEMIX352GB128DS by: SEMIKRON

Insulated Gate Bipolar Transistor, 370A I(C), 1200V V(BR)CES, N-Channel, CASE SEMIX 2S, 15 PIN

Part Details for SEMIX352GB128DS by SEMIKRON

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Price & Stock for SEMIX352GB128DS

Part # Distributor Description Stock Price Buy
DISTI # 16M0113
Newark Igbt Power Module, Continuous Collector Current:377A, Collector Emitter Saturation Voltage:2.35V, Power Dissipation:-, Operating Temperature Max:150°C, Igbt Termination:Stud, Collector Emitter Voltage Max:1.15V, Product Range:- Rohs Compliant: Yes |Semikron SEMIX352GB128DS Min Qty: 6 Package Multiple: 1 Date Code: 0 Container: Bulk 0
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Part Details for SEMIX352GB128DS

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SEMIX352GB128DS Part Data Attributes:

SEMIX352GB128DS SEMIKRON
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SEMIX352GB128DS SEMIKRON Insulated Gate Bipolar Transistor, 370A I(C), 1200V V(BR)CES, N-Channel, CASE SEMIX 2S, 15 PIN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer SEMIKRON INTERNATIONAL
Package Description CASE SEMIX 2S, 15 PIN
Pin Count 15
Manufacturer Package Code CASE SEMIX 2S
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 370 A
Collector-Emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 Code R-XUFM-X15
JESD-609 Code e2
Number of Elements 2
Number of Terminals 15
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN SILVER
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 675 ns
Turn-on Time-Nom (ton) 285 ns

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