Datasheets
SEMIX101GD066HDS by: SEMIKRON

Insulated Gate Bipolar Transistor, 140A I(C), 600V V(BR)CES, N-Channel, CASE SEMIX 13S, 20 PIN

Part Details for SEMIX101GD066HDS by SEMIKRON

Overview of SEMIX101GD066HDS by SEMIKRON

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Applications Industrial Automation Electronic Manufacturing

Price & Stock for SEMIX101GD066HDS

Part # Distributor Description Stock Price Buy
DISTI # 16M0093
Newark Igbt Module, Six, 600V, 139A, Continuous Collector Current:139A, Collector Emitter Saturation Voltage:1.9V, Power Dissipation:-, Operating Temperature Max:125°C, Igbt Termination:Stud, Collector Emitter Voltage Max:600V Rohs Compliant: Yes |Semikron SEMIX101GD066HDS RoHS: Compliant Min Qty: 4 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $133.2300
  • 5 $129.6300
  • 10 $126.0300
  • 25 $124.2300
  • 50 $122.4300
  • 100 $115.2300
$115.2300 / $133.2300 Buy Now
DISTI # SEMIX101GD066HDS
TME Module: IGBT, transistor/transistor, IGBT three-phase bridge Min Qty: 1 0
  • 1 $435.7500
  • 2 $382.5000
  • 4 $343.3800
  • 8 $320.5600
  • 16 $297.7400
$297.7400 / $435.7500 RFQ

Part Details for SEMIX101GD066HDS

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SEMIX101GD066HDS Part Data Attributes

SEMIX101GD066HDS SEMIKRON
Buy Now Datasheet
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SEMIX101GD066HDS SEMIKRON Insulated Gate Bipolar Transistor, 140A I(C), 600V V(BR)CES, N-Channel, CASE SEMIX 13S, 20 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer SEMIKRON INTERNATIONAL
Package Description FLANGE MOUNT, R-XUFM-X20
Pin Count 20
Manufacturer Package Code CASE SEMIX 13S
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 140 A
Collector-Emitter Voltage-Max 600 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X20
JESD-609 Code e3/e4
Number of Elements 6
Number of Terminals 20
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN/SILVER
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 495 ns
Turn-on Time-Nom (ton) 175 ns
VCEsat-Max 1.85 V

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