Part Details for SDF4N90JABVHSZ by Solitron Devices Inc
Overview of SDF4N90JABVHSZ by Solitron Devices Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
Part Details for SDF4N90JABVHSZ
SDF4N90JABVHSZ CAD Models
SDF4N90JABVHSZ Part Data Attributes
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SDF4N90JABVHSZ
Solitron Devices Inc
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Datasheet
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SDF4N90JABVHSZ
Solitron Devices Inc
Power Field-Effect Transistor, 4A I(D), 900V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | SOLITRON DEVICES INC | |
| Part Package Code | TO-254Z | |
| Package Description | FLANGE MOUNT, S-MSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Category CO2 Kg | 8.8 | |
| Additional Feature | CUSTOM BENT LEAD OPTIONS ARE AVAILABLE | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 900 V | |
| Drain Current-Max (ID) | 4 A | |
| Drain-source On Resistance-Max | 2.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-MSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | SQUARE | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 100 W | |
| Pulsed Drain Current-Max (IDM) | 16 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 160 ns | |
| Turn-on Time-Max (ton) | 100 ns |
Alternate Parts for SDF4N90JABVHSZ
This table gives cross-reference parts and alternative options found for SDF4N90JABVHSZ. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SDF4N90JABVHSZ, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SDF4N90JAAXGD1Z | Power Field-Effect Transistor, 4A I(D), 900V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Solitron Devices Inc | SDF4N90JABVHSZ vs SDF4N90JAAXGD1Z |
| SDF4N90JAAXHD1Z | Power Field-Effect Transistor, 4A I(D), 900V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Solitron Devices Inc | SDF4N90JABVHSZ vs SDF4N90JAAXHD1Z |
| SDF4N90JAASGU1Z | Power Field-Effect Transistor, 4A I(D), 900V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Solitron Devices Inc | SDF4N90JABVHSZ vs SDF4N90JAASGU1Z |
| SDF4N90JABEHSZ | Power Field-Effect Transistor, 4A I(D), 900V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN | Solitron Devices Inc | SDF4N90JABVHSZ vs SDF4N90JABEHSZ |
| SDF4N90JAAXGD1B | Power Field-Effect Transistor, 4A I(D), 900V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Solitron Devices Inc | SDF4N90JABVHSZ vs SDF4N90JAAXGD1B |
| SDF4N90JABEGU1B | Power Field-Effect Transistor, 4A I(D), 900V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN | Solitron Devices Inc | SDF4N90JABVHSZ vs SDF4N90JABEGU1B |
| SDF4N90JABEHD1Z | Power Field-Effect Transistor, 4A I(D), 900V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN | Solitron Devices Inc | SDF4N90JABVHSZ vs SDF4N90JABEHD1Z |
| SDF4N90JAASGD1Z | Power Field-Effect Transistor, 4A I(D), 900V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Solitron Devices Inc | SDF4N90JABVHSZ vs SDF4N90JAASGD1Z |
| SDF4N90JABSHD1B | Power Field-Effect Transistor, 4A I(D), 900V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN | Solitron Devices Inc | SDF4N90JABVHSZ vs SDF4N90JABSHD1B |
| SDF4N90JAAXHSZ | Power Field-Effect Transistor, 4A I(D), 900V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Solitron Devices Inc | SDF4N90JABVHSZ vs SDF4N90JAAXHSZ |