Part Details for SDF10N90GAFSGSZ by Solitron Devices Inc
Overview of SDF10N90GAFSGSZ by Solitron Devices Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for SDF10N90GAFSGSZ
SDF10N90GAFSGSZ CAD Models
SDF10N90GAFSGSZ Part Data Attributes
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SDF10N90GAFSGSZ
Solitron Devices Inc
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Datasheet
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SDF10N90GAFSGSZ
Solitron Devices Inc
Power Field-Effect Transistor, 10A I(D), 900V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | SOLITRON DEVICES INC | |
| Package Description | FLANGE MOUNT, R-MSFM-T3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | CUSTOM BENT LEAD OPTIONS ARE AVAILABLE | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 900 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 1.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-MSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 300 W | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 325 ns | |
| Turn-on Time-Max (ton) | 210 ns |
Alternate Parts for SDF10N90GAFSGSZ
This table gives cross-reference parts and alternative options found for SDF10N90GAFSGSZ. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SDF10N90GAFSGSZ, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SDF10N90GAFEGU1Z | Power Field-Effect Transistor, 10A I(D), 900V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Solitron Devices Inc | SDF10N90GAFSGSZ vs SDF10N90GAFEGU1Z |
| SDF10N100JECEGU1N | Power Field-Effect Transistor, 10A I(D), 1000V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Solitron Devices Inc | SDF10N90GAFSGSZ vs SDF10N100JECEGU1N |
| SDF10N90GAFXGD1B | Power Field-Effect Transistor, 10A I(D), 900V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Solitron Devices Inc | SDF10N90GAFSGSZ vs SDF10N90GAFXGD1B |
| SDF10N100JEBSGSZ | Power Field-Effect Transistor, 10A I(D), 1000V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259AA, 3 PIN | Solitron Devices Inc | SDF10N90GAFSGSZ vs SDF10N100JEBSGSZ |
| SDF10N100JEAEHSN | Power Field-Effect Transistor, 10A I(D), 1000V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, | Solitron Devices Inc | SDF10N90GAFSGSZ vs SDF10N100JEAEHSN |
| SDF10N100JEAVGU1Z | Power Field-Effect Transistor, 10A I(D), 1000V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, 3 PIN | Solitron Devices Inc | SDF10N90GAFSGSZ vs SDF10N100JEAVGU1Z |
| SDF10N100JEBEHU1B | Power Field-Effect Transistor, 10A I(D), 1000V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259AA, 3 PIN | Solitron Devices Inc | SDF10N90GAFSGSZ vs SDF10N100JEBEHU1B |
| SDF10N100JEASGU1B | Power Field-Effect Transistor, 10A I(D), 1000V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, 3 PIN | Solitron Devices Inc | SDF10N90GAFSGSZ vs SDF10N100JEASGU1B |
| SDF10N100JEBVHSB | Power Field-Effect Transistor, 10A I(D), 1000V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259AA, 3 PIN | Solitron Devices Inc | SDF10N90GAFSGSZ vs SDF10N100JEBVHSB |
| SDF11N100GAFXGSZ | Power Field-Effect Transistor, 11A I(D), 1000V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Solitron Devices Inc | SDF10N90GAFSGSZ vs SDF11N100GAFXGSZ |