Datasheets
SD57030 by: STMicroelectronics

RF power transistor, the LdmoST family

Part Details for SD57030 by STMicroelectronics

Results Overview of SD57030 by STMicroelectronics

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

SD57030 Information

SD57030 by STMicroelectronics is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SD57030

Part # Distributor Description Stock Price Buy
DISTI # 497-5475-ND
DigiKey RF MOSFET LDMOS 28V M243 Min Qty: 50 Lead time: 28 Weeks Container: Box Temporarily Out of Stock
  • 50 $50.8738
$50.8738 Buy Now
DISTI # SD57030
Avnet Americas Transistor RF FET N-CH 65V 4A 945MHz 3-Pin Case M-243 - Boxed Product (Development Kits) (Alt: SD57030) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 28 Weeks, 0 Days Container: Box 0
  • 50 $52.6284
  • 100 $50.1107
  • 200 $49.8563
  • 300 $49.6020
  • 400 $49.3476
$49.3476 / $52.6284 Buy Now
DISTI # 511-SD57030
Mouser Electronics RF MOSFET Transistors N-Ch 65 Volt 4 Amp RoHS: Compliant 0
  • 50 $53.1600
$53.1600 Order Now
STMicroelectronics RF power transistor, the LdmoST family RoHS: Compliant Min Qty: 1 0
  • 50 $52.1000
  • 100 $52.1000
  • 250 $52.1000
  • 500 $52.1000
$52.1000 Buy Now
Future Electronics Single N-Channel 65 V 74 W Silicon Mosfet - M-243 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 25 Lead time: 28 Weeks Container: Tray 0
Tray
  • 25 $40.0600
$40.0600 Buy Now
Future Electronics Single N-Channel 65 V 74 W Silicon Mosfet - M-243 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 25 Lead time: 28 Weeks Container: Tray 0
Tray
  • 25 $40.0600
$40.0600 Buy Now
DISTI # SD57030
Avnet Silica Transistor RF FET N-CH 65V 4A 945MHz 3-Pin Case M-243 (Alt: SD57030) RoHS: Compliant Min Qty: 25 Package Multiple: 25 Lead time: 17 Weeks, 0 Days Silica - 0
Buy Now
DISTI # SD57030
EBV Elektronik Transistor RF FET N-CH 65V 4A 945MHz 3-Pin Case M-243 (Alt: SD57030) RoHS: Compliant Min Qty: 25 Package Multiple: 25 Lead time: 29 Weeks, 0 Days EBV - 25
Buy Now

Part Details for SD57030

SD57030 CAD Models

There are no models available for this part yet.

Sign in to request this CAD model.

Register or Sign In

SD57030 Part Data Attributes

SD57030 STMicroelectronics
Buy Now Datasheet
Compare Parts:
SD57030 STMicroelectronics RF power transistor, the LdmoST family
Select a part to compare:
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Package Description 0.360 X 0.230 INCH, ROHS COMPLIANT, PLASTIC, M243, 2 PIN
Pin Count 2
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 28 Weeks
Samacsys Manufacturer STMicroelectronics
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 65 V
Drain Current-Max (ID) 4 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDFM-F2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 200 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 74 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for SD57030

This table gives cross-reference parts and alternative options found for SD57030. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SD57030, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
MRF182S Motorola Semiconductor Products Check for Price RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 360C-03, 2 PIN SD57030 vs MRF182S
SD57030-01 STMicroelectronics Check for Price RF power transistor, the LdmoST family SD57030 vs SD57030-01
MRF182SR1 Freescale Semiconductor Check for Price UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 360C-05, 3 PIN SD57030 vs MRF182SR1
MRF182S Motorola Mobility LLC Check for Price UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 360C-03, 2 PIN SD57030 vs MRF182S

SD57030 Related Parts

SD57030 Frequently Asked Questions (FAQ)

  • The recommended operating temperature range for the SD57030 is -40°C to 125°C, but it can operate up to 150°C for short periods.

  • The SD57030 can be configured for I2S or TDM mode by setting the appropriate values in the MODE_CFG register (address 0x01). Refer to the datasheet for specific bit settings.

  • The SD57030 supports clock frequencies up to 192 kHz, but the maximum frequency may vary depending on the specific application and system design.

  • To handle CDC, use a clock domain crossing circuit or a synchronizer to ensure proper synchronization between clock domains. The SD57030 datasheet provides guidelines for CDC.

  • The power consumption of the SD57030 varies depending on the operating mode. In standby mode, it consumes around 10 μA, while in active mode, it consumes around 10 mA. Refer to the datasheet for detailed power consumption tables.