SD212DE
Description: Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Overview of SD212DE by Vishay Siliconix

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 3 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Consumer Electronics Audio and Video Systems

Price & Stock for SD212DE by Vishay Siliconix

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   Min Qty: 2 400
  • 2 $2.8000
  • 10 $1.8200
  • 29 $1.4000
  • 91 $1.3068
  • 193 $1.2132
  • 393 $1.1480
$1.1480 / $2.8000 Buy Now
Bristol Electronics   1
RFQ
Quest Components   320
  • 1 $3.7500
  • 108 $1.7500
  • 287 $1.6250
$1.6250 / $3.7500 Buy Now

CAD Models for SD212DE by Vishay Siliconix
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Part Data Attributes for SD212DE by Vishay Siliconix

SD212DE
Vishay Siliconix
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SILICONIX INC
Package Description
,
Reach Compliance Code
unknown
ECCN Code
EAR99
Configuration
SINGLE
Drain Current-Max (ID)
0.05 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code
e0
Number of Elements
1
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
125 °C
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
0.3 W
Surface Mount
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Want to compare parts?
  1. SD212DE
    Vishay Siliconix
    Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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