Datasheets
SCX18T512160AF-25E by: Xi'an UniIC Semiconductors Co Ltd

DDR DRAM,

Part Details for SCX18T512160AF-25E by Xi'an UniIC Semiconductors Co Ltd

Overview of SCX18T512160AF-25E by Xi'an UniIC Semiconductors Co Ltd

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Part Details for SCX18T512160AF-25E

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SCX18T512160AF-25E Part Data Attributes

SCX18T512160AF-25E Xi'an UniIC Semiconductors Co Ltd
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SCX18T512160AF-25E Xi'an UniIC Semiconductors Co Ltd DDR DRAM,
Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer XIAN UNILC SEMICONDUCTORS CO LTD
Package Description TFBGA,
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.28
Access Mode MULTI BANK PAGE BURST
Access Time-Max 0.4 ns
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-PBGA-B84
Length 12.5 mm
Memory Density 536870912 bit
Memory IC Type DDR DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 84
Number of Words 33554432 words
Number of Words Code 32000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 95 °C
Operating Temperature-Min
Organization 32MX16
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Seated Height-Max 1.2 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 8 mm

Alternate Parts for SCX18T512160AF-25E

This table gives cross-reference parts and alternative options found for SCX18T512160AF-25E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SCX18T512160AF-25E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MT47H32M16HR-25E:H DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc SCX18T512160AF-25E vs MT47H32M16HR-25E:H
K4T51163QQ-BIE70 DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, FBGA-84 Samsung Semiconductor SCX18T512160AF-25E vs K4T51163QQ-BIE70
EM68B16CWPA-25H DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 10 X 12.50 MM, 1.20 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 Etron Technology Inc SCX18T512160AF-25E vs EM68B16CWPA-25H
M14D5121632A-2.5BBIAG2A DDR DRAM, Elite Semiconductor Memory Technology Inc SCX18T512160AF-25E vs M14D5121632A-2.5BBIAG2A
MT47H32M16NF-25EIT:HTR DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, FBGA-84 Micron Technology Inc SCX18T512160AF-25E vs MT47H32M16NF-25EIT:HTR
MT47H32M16HR-25EIT:GTR DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc SCX18T512160AF-25E vs MT47H32M16HR-25EIT:GTR
M14D5121632A-2.5BBG2A DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, BGA-84 Elite Semiconductor Memory Technology Inc SCX18T512160AF-25E vs M14D5121632A-2.5BBG2A
K4T51163QN-BCF70 DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, FBGA-84 Samsung Semiconductor SCX18T512160AF-25E vs K4T51163QN-BCF70
MT47H32M16NF-25EAAT:H DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc SCX18T512160AF-25E vs MT47H32M16NF-25EAAT:H
AS4C32M16D2A-25BAN Synchronous DRAM, 32MX16, 0.4ns, CMOS, PBGA84, FBGA-84 Alliance Memory Inc SCX18T512160AF-25E vs AS4C32M16D2A-25BAN

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