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Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SCTL90N65G2V by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
40AJ8413
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Newark | Sic Mosfet, N-Ch, 650V, 40A, Powerflat-5, Mosfet Module Configuration:Single, Channel Type:N Chann... more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1857 |
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$31.8200 / $39.9900 | Buy Now |
DISTI #
497-SCTL90N65G2VCT-ND
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DigiKey | SILICON CARBIDE POWER MOSFET 650 Min Qty: 1 Lead time: 45 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1 In Stock |
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$20.2500 / $31.4300 | Buy Now |
DISTI #
SCTL90N65G2V
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Avnet Americas | Transistor MOSFET N-CH 650V 40A 5-Pin PowerFLAT T/R - Tape and Reel (Alt: SCTL90N65G2V) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 45 Weeks, 0 Days Container: Reel | 0 |
|
$20.2500 / $21.6270 | Buy Now |
DISTI #
511-SCTL90N65G2V
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Mouser Electronics | SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A RoHS: Compliant | 2698 |
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$20.2400 / $28.4900 | Buy Now |
DISTI #
V36:1790_25500414
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Arrow Electronics | Trans MOSFET N-CH SiC 650V 40A 4-Pin Power Flat EP T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 45 Weeks Date Code: 2444 | Americas - 15000 |
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$22.3215 / $22.6090 | Buy Now |
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STMicroelectronics | Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV package RoHS: Compliant Min Qty: 1 | 2698 |
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$20.0200 / $27.9200 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 3000 Lead time: 45 Weeks Container: Cut Tape/Mini-Reel |
0 Cut Tape/Mini-Reel |
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$20.9600 / $22.0000 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 45 Weeks Container: Reel |
0 Reel |
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$20.9600 | Buy Now |
DISTI #
SCTL90N65G2V
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TME | Transistor: N-MOSFET, unipolar Min Qty: 1 | 0 |
|
$25.9600 / $43.7000 | RFQ |
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Ameya Holding Limited | STPOWER SiC MOSFETs,SCTL90N65G2V | 2313 |
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RFQ |
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SCTL90N65G2V
STMicroelectronics
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Datasheet
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Compare Parts:
SCTL90N65G2V
STMicroelectronics
Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV package
Select a part to compare: |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 45 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Additional Feature | BULK: 3000 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 650 V | |
Drain Current-Max (ID) | 40 A | |
Drain-source On Resistance-Max | 0.024 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 49 pF | |
JESD-30 Code | S-PSSO-N4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 935 W | |
Pulsed Drain Current-Max (IDM) | 160 A | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON CARBIDE |