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Transistors / Power Field-Effect Transistors / SCTL35N65G2V
Datasheets
SCTL35N65G2V by: STMicroelectronics

Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV package

Part Details for SCTL35N65G2V by STMicroelectronics

Results Overview of SCTL35N65G2V by STMicroelectronics

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SCTL35N65G2V Information

SCTL35N65G2V by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SCTL35N65G2V

Part # Distributor Description Stock Price Buy
DISTI # 50AJ6009
Newark Sic Mosfet, N-Ch, 650V, 40A, Mosfet Module Configuration:Single, Channel Type:N Channel, Continuo... us Drain Current Id:40A, Drain Source Voltage Vds:650V, No. Of Pins:5Pins, Rds(On) Test Voltage:20V, Power Dissipation:417W Rohs Compliant: Yes |Stmicroelectronics SCTL35N65G2V more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 2939
  • 1 $19.2400
  • 10 $17.5200
  • 25 $17.1900
  • 50 $16.5000
  • 100 $15.7900
  • 250 $15.4700
  • 500 $14.7700
  • 1,000 $13.9500
$13.9500 / $19.2400 Buy Now
DISTI # 497-SCTL35N65G2VCT-ND
DigiKey TRANS SJT N-CH 650V PWRFLAT HV Min Qty: 1 Lead time: 45 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 5936
In Stock
  • 1 $16.0200
  • 10 $11.8150
  • 100 $10.4829
  • 500 $10.4040
  • 3,000 $10.3944
$10.3944 / $16.0200 Buy Now
DISTI # SCTL35N65G2V
Avnet Americas Transistor MOSFET N-CH 650V 40A 5-Pin PowerFLAT T/R - Tape and Reel (Alt: SCTL35N65G2V) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 45 Weeks, 0 Days Container: Reel 0
  • 3,000 $8.6076
  • 6,000 $8.5535
  • 12,000 $8.3951
  • 18,000 $8.2777
  • 24,000 $8.2353
$8.2353 / $8.6076 Buy Now
DISTI # 511-SCTL35N65G2V
Mouser Electronics SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ 40 A RoHS: Compliant 2697
  • 1 $14.4100
  • 10 $11.1000
  • 25 $11.0900
  • 100 $8.6800
  • 500 $8.5000
  • 3,000 $8.4900
$8.4900 / $14.4100 Buy Now
STMicroelectronics Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV package RoHS: Compliant Min Qty: 1 2697
  • 1 $14.1200
  • 10 $10.8800
  • 25 $10.8700
  • 100 $8.5100
  • 250 $8.5100
  • 500 $8.3300
$8.3300 / $14.1200 Buy Now
DISTI # SCTL35N65G2V
TME Transistor: N-MOSFET, unipolar Min Qty: 1 0
  • 1 $20.3100
  • 10 $18.8800
  • 100 $16.3100
  • 500 $14.7700
  • 1,000 $13.7500
  • 3,000 $12.7200
  • 6,000 $12.1100
$12.1100 / $20.3100 RFQ
DISTI # SCTL35N65G2V
Avnet Silica Transistor MOSFET NCH 650V 40A 5Pin PowerFLAT TR (Alt: SCTL35N65G2V) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Silica - 3000
Buy Now
DISTI # SCTL35N65G2V
EBV Elektronik Transistor MOSFET NCH 650V 40A 5Pin PowerFLAT TR (Alt: SCTL35N65G2V) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 46 Weeks, 0 Days EBV - 0
Buy Now
Vyrian Transistors 3351
RFQ

Part Details for SCTL35N65G2V

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SCTL35N65G2V Part Data Attributes

Parametric Data
SCTL35N65G2V STMicroelectronics
Buy Now Datasheet
Compare Parts:
SCTL35N65G2V STMicroelectronics Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV package
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 45 Weeks
Samacsys Manufacturer STMicroelectronics
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 40 A
Drain-source On Resistance-Max 0.067 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 30 pF
JESD-30 Code S-PSSO-N4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 417 W
Pulsed Drain Current-Max (IDM) 160 A
Surface Mount YES
Terminal Form NO LEAD
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE

SCTL35N65G2V Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the SCTL35N65G2V is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the specified maximum ratings and avoid operating conditions that may cause excessive heat, voltage, or current stress.

  • To ensure reliable operation of the SCTL35N65G2V in high-temperature environments, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow. Additionally, the device's thermal characteristics, such as the junction-to-case thermal resistance (RthJC), should be considered when designing the system.

  • The recommended PCB layout and design considerations for the SCTL35N65G2V include using a multi-layer PCB with a solid ground plane, placing the device close to the heat sink, and using wide traces for power and ground connections. Additionally, it's essential to follow proper decoupling and bypassing techniques to minimize noise and ensure stable operation.

  • The SCTL35N65G2V has built-in ESD protection, but it's still essential to follow proper ESD handling and protection practices during manufacturing, assembly, and testing. This includes using ESD-safe materials, equipment, and procedures, as well as implementing ESD protection devices, such as TVS diodes or ESD arrays, in the system design.

  • The recommended gate drive circuits and techniques for the SCTL35N65G2V include using a dedicated gate driver IC, such as the STMicroelectronics L638xA series, and following proper gate drive design practices, such as using a low-impedance gate drive circuit, minimizing gate-source voltage ringing, and ensuring proper gate-source voltage rating.