Datasheets
SCT30N120 by: STMicroelectronics

Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package

Part Details for SCT30N120 by STMicroelectronics

Overview of SCT30N120 by STMicroelectronics

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Price & Stock for SCT30N120

Part # Distributor Description Stock Price Buy
DISTI # 94X2608
Newark Mosfet, N Ch, 1.2Kv, 40A, Hip247-3, Mosfet Module Configuration:Single, Channel Type:N Channel, Continuous Drain Current Id:40A, Drain Source Voltage Vds:1.2Kv, No. Of Pins:3Pins, Rds(On) Test Voltage:20V, Power Dissipation:270W Rohs Compliant: Yes |Stmicroelectronics SCT30N120 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 280
  • 1 $22.8100
  • 5 $22.5700
  • 10 $22.3200
  • 25 $22.0800
  • 50 $21.8400
  • 100 $21.5900
$21.5900 / $22.8100 Buy Now
DISTI # 497-14960-ND
DigiKey SICFET N-CH 1200V 40A HIP247 Min Qty: 1 Lead time: 32 Weeks Container: Tube 449
In Stock
  • 1 $22.0300
  • 30 $14.8250
$14.8250 / $22.0300 Buy Now
DISTI # SCT30N120
Avnet Americas Trans MOSFET N-CH 1200V 45A 3-Pin HiP247 Tube - Rail/Tube (Alt: SCT30N120) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 32 Weeks, 0 Days Container: Tube 0
  • 600 $13.1646
$13.1646 Buy Now
DISTI # 511-SCT30N120
Mouser Electronics SiC MOSFETs 1200V silicon carbide MOSFET RoHS: Compliant 310
  • 1 $23.1100
  • 10 $20.5400
  • 25 $19.1600
  • 50 $18.5600
  • 100 $17.9600
  • 250 $17.4400
$17.4400 / $23.1100 Buy Now
STMicroelectronics Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package RoHS: Compliant Min Qty: 1 230
  • 1 $21.5900
  • 10 $20.8700
  • 25 $14.5300
  • 50 $14.5300
  • 100 $14.5300
  • 250 $14.5300
$14.5300 / $21.5900 Buy Now
Future Electronics Single N-Channel 1200 V 270 W 105 nC SiC Through Hole Mosfet - HiP247 RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Lead time: 32 Weeks Container: Tube 3840
Tube
  • 30 $15.0500
  • 60 $14.9700
  • 90 $14.9100
  • 120 $14.8800
  • 150 $14.7600
$14.7600 / $15.0500 Buy Now
Future Electronics Single N-Channel 1200 V 270 W 105 nC SiC Through Hole Mosfet - HiP247 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Lead time: 32 Weeks Container: Tube 0
Tube
  • 1 $15.2500
  • 5 $15.0500
  • 25 $14.8500
  • 50 $14.7700
  • 150 $14.5200
$14.5200 / $15.2500 Buy Now
Future Electronics Single N-Channel 1200 V 270 W 105 nC SiC Through Hole Mosfet - HiP247 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Lead time: 32 Weeks Container: Tube 0
Tube
  • 1 $15.2500
  • 5 $15.0500
  • 25 $14.8500
  • 50 $14.7700
  • 150 $14.5200
$14.5200 / $15.2500 Buy Now
Future Electronics Single N-Channel 1200 V 270 W 105 nC SiC Through Hole Mosfet - HiP247 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Lead time: 32 Weeks Container: Tube 0
Tube
  • 30 $15.0500
  • 60 $14.9700
  • 90 $14.9100
  • 120 $14.8800
  • 150 $14.7600
$14.7600 / $15.0500 Buy Now
Future Electronics Single N-Channel 1200 V 270 W 105 nC SiC Through Hole Mosfet - HiP247 RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Lead time: 32 Weeks Container: Tube 0
Tube
  • 1 $15.5000
  • 5 $15.3000
  • 25 $15.1000
  • 50 $15.0100
  • 150 $14.7600
$14.7600 / $15.5000 Buy Now
DISTI # SCT30N120
TME Transistor: N-MOSFET, SiC, unipolar, 1.2kV, 34A, Idm: 90A, 270W Min Qty: 1 0
  • 1 $22.7100
  • 3 $21.9500
  • 10 $21.2400
$21.2400 / $22.7100 RFQ
DISTI # SCT30N120
Avnet Silica Trans MOSFET N-CH 1200V 45A 3-Pin HiP247 Tube (Alt: SCT30N120) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days Silica - 120
Buy Now
DISTI # SCT30N120
EBV Elektronik Trans MOSFET N-CH 1200V 45A 3-Pin HiP247 Tube (Alt: SCT30N120) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 33 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SCT30N120

SCT30N120 CAD Models

SCT30N120 Part Data Attributes

SCT30N120 STMicroelectronics
Buy Now Datasheet
Compare Parts:
SCT30N120 STMicroelectronics Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 32 Weeks
Samacsys Manufacturer STMicroelectronics
Configuration SINGLE
Drain Current-Max (ID) 40 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e3
Number of Elements 1
Operating Temperature-Max 200 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 270 W
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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