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Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
02AH4685
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Newark | Mosfet, N-Ch, 650V, 30A, 175Deg C, 134W, Transistor Polarity:N Channel, Continuous Drain Current Id:30A, Drain Source Voltage Vds:650V, On Resistance Rds(On):0.08Ohm, Rds(On) Test Voltage Vgs:18V, Threshold Voltage Vgs:5.6V, Power Rohs Compliant: Yes |Rohm SCT3080ALHRC11 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 450 |
|
$15.1800 / $21.0800 | Buy Now |
DISTI #
SCT3080ALHRC11-ND
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DigiKey | SICFET N-CH 650V 30A TO247N Min Qty: 1 Lead time: 27 Weeks Container: Tube |
454 In Stock |
|
$14.0021 / $20.2800 | Buy Now |
DISTI #
755-SCT3080ALHRC11
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Mouser Electronics | MOSFET 650V 30A 134W SIC 80mOhm TO-247N RoHS: Compliant | 390 |
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$13.9700 / $20.2700 | Buy Now |
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Future Electronics | 650 V 30A 134W Through Hole Automotive Grade N-Channel SiC Power MOSFET-TO-247N RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 30 Container: Tube | 0Tube |
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$13.7000 / $14.0000 | Buy Now |
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Future Electronics | 650 V 30A 134W Through Hole Automotive Grade N-Channel SiC Power MOSFET-TO-247N RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 450 Container: Tube | 0Tube |
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$13.7000 | Buy Now |
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Quest Components | 713 |
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$12.3675 / $18.5513 | Buy Now | |
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Ameya Holding Limited | http://www.ameya360.com/product/6927416 Min Qty: 1 | 12-Authorized Distributor |
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$10.2600 / $13.7200 | Buy Now |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2023 Date Code: 2023 | 450 |
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$8.2450 / $21.6800 | Buy Now |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2020 Date Code: 2020 | 442 |
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$8.2450 / $21.6800 | Buy Now |
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SCT3080ALHRC11
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
SCT3080ALHRC11
ROHM Semiconductor
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROHM CO LTD | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 27 Weeks | |
Date Of Intro | 2018-12-11 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 650 V | |
Drain Current-Max (ID) | 30 A | |
Drain-source On Resistance-Max | 0.104 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 19 pF | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 265 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 134 W | |
Pulsed Drain Current-Max (IDM) | 75 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON CARBIDE |