Datasheets
SCT3030KLGC11 by: ROHM Semiconductor

Power Field-Effect Transistor, 72A I(D), 1200V, 0.039ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN

Part Details for SCT3030KLGC11 by ROHM Semiconductor

Results Overview of SCT3030KLGC11 by ROHM Semiconductor

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Applications Industrial Automation Energy and Power Systems Renewable Energy

SCT3030KLGC11 Information

SCT3030KLGC11 by ROHM Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SCT3030KLGC11

Part # Distributor Description Stock Price Buy
DISTI # 05AC9461
Newark Sic Mosfet, N-Ch, 1.2Kv, 72A, To-247N-3, Mosfet Module Configuration:Single, Channel Type:N Channe... l, Continuous Drain Current Id:72A, Drain Source Voltage Vds:1.2Kv, No. Of Pins:3Pins, Rds(On) Test Voltage:18V, Power Dissipation:339Wrohs Compliant: Yes |Rohm SCT3030KLGC11 more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $62.7400
  • 5 $62.7400
  • 10 $62.7400
  • 25 $62.7300
  • 60 $62.7300
  • 120 $62.7200
$62.7200 / $62.7400 Buy Now
DISTI # SCT3030KLGC11-ND
DigiKey SICFET N-CH 1200V 72A TO247N Min Qty: 1 Lead time: 27 Weeks Container: Tube 265
In Stock
  • 1 $60.3400
  • 30 $60.3300
$60.3300 / $60.3400 Buy Now
DISTI # 755-SCT3030KLGC11
Mouser Electronics SiC MOSFETs N-Ch 1200V SiC 72A 30mOhm TrenchMOS RoHS: Compliant 729
  • 1 $60.3400
  • 10 $60.3300
  • 50 $60.3200
  • 100 $60.3000
$60.3000 / $60.3400 Buy Now
Future Electronics SCT3030KL Series 1200 V 72 A 39 mOhm N-Channel SiC Power Mosfet - TO-247N RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 450 Lead time: 27 Weeks Container: Tube 0
Tube
  • 450 $59.2100
$59.2100 Buy Now
Future Electronics SCT3030KL Series 1200 V 72 A 39 mOhm N-Channel SiC Power Mosfet - TO-247N RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 40 Weeks Container: Bulk 0
Bulk
  • 1 $15.5100
  • 5 $15.3100
  • 25 $15.1100
  • 50 $15.0300
  • 150 $14.7800
$14.7800 / $15.5100 Buy Now
DISTI # 77269441
Verical Trans MOSFET N-CH SiC 1.2KV 72A 3-Pin(3+Tab) TO-247N Tube Min Qty: 2 Package Multiple: 1 Date Code: 2301 Americas - 900
  • 2 $51.7846
$51.7846 Buy Now
DISTI # 77930439
Verical Trans MOSFET N-CH SiC 1.2KV 72A 3-Pin(3+Tab) TO-247N Tube Min Qty: 1 Package Multiple: 1 Date Code: 2337 Americas - 312
  • 1 $69.3750
  • 5 $55.1250
  • 50 $46.8750
  • 100 $45.7500
$45.7500 / $69.3750 Buy Now
DISTI # 68019500
Verical Trans MOSFET N-CH SiC 1.2KV 72A 3-Pin(3+Tab) TO-247N Tube Min Qty: 2 Package Multiple: 1 Date Code: 2201 Americas - 166
  • 2 $51.7846
$51.7846 Buy Now
Bristol Electronics   240
RFQ
Quest Components POWER FIELD-EFFECT TRANSISTOR, 72A I(D), 1200V, 0.039OHM, 1-ELEMENT, N-CHANNEL, SILICON CARBIDE, MET... AL-OXIDE SEMICONDUCTOR FET, TO-247 more 852
  • 1 $54.8700
  • 115 $42.5243
  • 236 $41.1525
$41.1525 / $54.8700 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 72A I(D), 1200V, 0.039OHM, 1-ELEMENT, N-CHANNEL, SILICON CARBIDE, MET... AL-OXIDE SEMICONDUCTOR FET, TO-247 more 192
  • 1 $65.8440
  • 37 $52.6752
  • 96 $51.0291
$51.0291 / $65.8440 Buy Now
DISTI # SCT3030KLGC11
TTI SiC MOSFETs N-Ch 1200V SiC 72A 30mOhm TrenchMOS RoHS: Compliant pbFree: Pb-Free Min Qty: 450 Package Multiple: 30 Container: Tube Americas - 0
  • 450 $60.3300
$60.3300 Buy Now
Ameya Holding Limited   Min Qty: 1 1800-Authorized Distributor
  • 1 $44.2100
  • 5 $43.2300
  • 10 $41.2500
  • 25 $39.5200
  • 100 $35.8200
  • 450 $30.8750
$30.8750 / $44.2100 Buy Now
DISTI # C1S625903155325
Chip One Stop 1200V, 72A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET RoHS: Compliant pbFree: No Container: Tube 312
  • 1 $55.5000
  • 5 $44.1000
  • 50 $37.5000
  • 100 $36.6000
$36.6000 / $55.5000 Buy Now

Part Details for SCT3030KLGC11

SCT3030KLGC11 CAD Models

SCT3030KLGC11 Part Data Attributes

SCT3030KLGC11 ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
SCT3030KLGC11 ROHM Semiconductor Power Field-Effect Transistor, 72A I(D), 1200V, 0.039ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description TO-247N, 3 PIN
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 27 Weeks
Date Of Intro 2017-03-13
Samacsys Manufacturer ROHM Semiconductor
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 72 A
Drain-source On Resistance-Max 0.039 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 265
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 180 A
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE

SCT3030KLGC11 Related Parts

SCT3030KLGC11 Frequently Asked Questions (FAQ)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.

  • The device requires a stable input voltage (VIN) and a bypass capacitor (CBYP) to ensure proper biasing. A 10uF capacitor is recommended for CBYP.

  • The maximum power dissipation (PD) is 2.5W. Exceeding this limit may cause the device to overheat and reduce its lifespan.

  • The device is rated for operation up to 125°C (TJ). However, derating is required for temperatures above 85°C to ensure reliable operation.

  • Handle the device with an ESD wrist strap or mat, and ensure the PCB has ESD protection circuits, such as TVS diodes, to prevent damage.