Part Details for S2M0040120K by Sangdest Microelectronics (Nanjing) Co Ltd
Overview of S2M0040120K by Sangdest Microelectronics (Nanjing) Co Ltd
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
Price & Stock for S2M0040120K
Part # | Distributor | Description | Stock | Price | Buy | |
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LCSC | 1.2kV 1 N-Channel TO-247-4 MOSFETs ROHS | 10 |
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$8.1058 / $9.1583 | Buy Now |
Part Details for S2M0040120K
S2M0040120K CAD Models
S2M0040120K Part Data Attributes
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S2M0040120K
Sangdest Microelectronics (Nanjing) Co Ltd
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Datasheet
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S2M0040120K
Sangdest Microelectronics (Nanjing) Co Ltd
Power Field-Effect Transistor, 55A I(D), 1200V, 0.052ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247,
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | SANGDEST MICROELECTRONICS (NANJING) CO LTD | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1200 V | |
Drain Current-Max (ID) | 55 A | |
Drain-source On Resistance-Max | 0.052 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 5 pF | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 320.5 W | |
Pulsed Drain Current-Max (IDM) | 160 A | |
Reference Standard | IEC-60747-8-4 | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON CARBIDE |