Datasheets
S2GHE3/52T by:
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Semiconductors
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Rectifier Diode, 1 Phase, 1 Element, 1.5A, 400V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN

Part Details for S2GHE3/52T by Vishay Intertechnologies

Results Overview of S2GHE3/52T by Vishay Intertechnologies

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S2GHE3/52T Information

S2GHE3/52T by Vishay Intertechnologies is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.

A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.

Price & Stock for S2GHE3/52T

Part # Distributor Description Stock Price Buy
DISTI # S2GHE3/52T
EBV Elektronik Diode Switching 400V 15A 2Pin SMB TR (Alt: S2GHE3/52T) RoHS: Compliant Min Qty: 750 Package Multiple: 750 Lead time: 143 Weeks, 0 Days EBV - 0
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Part Details for S2GHE3/52T

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S2GHE3/52T Part Data Attributes

S2GHE3/52T Vishay Intertechnologies
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S2GHE3/52T Vishay Intertechnologies Rectifier Diode, 1 Phase, 1 Element, 1.5A, 400V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
Reach Compliance Code not_compliant
Samacsys Manufacturer Vishay
Additional Feature FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT
Application GENERAL PURPOSE
Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 1.15 V
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 50 A
Number of Elements 1
Number of Phases 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Output Current-Max 1.5 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 400 V
Reverse Recovery Time-Max 2 µs
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40

Alternate Parts for S2GHE3/52T

This table gives cross-reference parts and alternative options found for S2GHE3/52T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of S2GHE3/52T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
S2G-E3 Vishay Intertechnologies Check for Price Rectifier Diode, 1 Element, 1.5A, 400V V(RRM) S2GHE3/52T vs S2G-E3
S2G-E3/52T Vishay Semiconductors Check for Price DIODE 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Rectifier Diode S2GHE3/52T vs S2G-E3/52T
S2G-T Micro Commercial Components Check for Price Rectifier Diode, S2GHE3/52T vs S2G-T
S2G-E3/52T Vishay Intertechnologies $0.1229 Rectifier Diode, 1 Phase, 1 Element, 1.5A, 400V V(RRM), Silicon, DO-214AA, SMB, 2 PIN S2GHE3/52T vs S2G-E3/52T
S2G PanJit Semiconductor Check for Price Rectifier Diode, 1 Phase, 1 Element, 2A, 400V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN S2GHE3/52T vs S2G
S2G Fairchild Semiconductor Corporation Check for Price Rectifier Diode, 1 Phase, 1 Element, 2A, 400V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, SMB, 2 PIN S2GHE3/52T vs S2G
S2G Hitano Enterprise Corp Check for Price Rectifier Diode, 1 Phase, 1 Element, 2A, 400V V(RRM), Silicon, DO-214AA, SMB, 2 PIN S2GHE3/52T vs S2G
Part Number Manufacturer Composite Price Description Compare
S2G Micro Commercial Components Check for Price Rectifier Diode, 1 Phase, 1 Element, 2A, 400V V(RRM), Silicon, DO-214AA, PLASTIC, SMBJ, 2 PIN S2GHE3/52T vs S2G
S2G-GT3 Sangdest Microelectronics (Nanjing) Co Ltd Check for Price Rectifier Diode, 1 Phase, 1 Element, 2A, 400V V(RRM), Silicon, DO-214AA, PALSTIC, SMB, 2 PIN S2GHE3/52T vs S2G-GT3
S2G Sangdest Microelectronics (Nanjing) Co Ltd Check for Price Rectifier Diode, 1 Phase, 1 Element, 2A, 400V V(RRM), Silicon, DO-214AA, PALSTIC, SMB, 2 PIN S2GHE3/52T vs S2G
CMR2-04 Central Semiconductor Corp Check for Price Rectifier Diode, 1 Phase, 1 Element, 2A, 400V V(RRM), Silicon, SMB, 2 PIN S2GHE3/52T vs CMR2-04
S3GB Lite-On Semiconductor Corporation Check for Price Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, SMB, 2 PIN S2GHE3/52T vs S3GB
S2G onsemi $0.0250 General-Purpose Rectifiers (Glass Passivated), SMB, 3000-REEL S2GHE3/52T vs S2G
S2G International Semiconductor Inc Check for Price Rectifier Diode, 1 Phase, 1 Element, 1.5A, 400V V(RRM), Silicon, DO-214AA, S2GHE3/52T vs S2G
S2GHE3/5BT Vishay Semiconductors Check for Price DIODE 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Rectifier Diode S2GHE3/52T vs S2GHE3/5BT
S2G-G Sangdest Microelectronics (Nanjing) Co Ltd Check for Price Rectifier Diode, 1 Phase, 1 Element, 2A, 400V V(RRM), Silicon, DO-214AA, PALSTIC, SMB, 2 PIN S2GHE3/52T vs S2G-G
S2G Surge Components Inc Check for Price Rectifier Diode, 1 Phase, 1 Element, 2A, 400V V(RRM), Silicon, DO-214AA, PLASTIC, SMB, 2 PIN S2GHE3/52T vs S2G

S2GHE3/52T Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for the S2GHE3/52T is a rectangular pad with a size of 2.5 mm x 1.5 mm, with a thermal pad of 2.2 mm x 1.2 mm. The pad should have a solder mask defined (SMD) and a non-solder mask defined (NSMD) thermal pad.

  • To ensure reliable soldering, use a soldering iron with a temperature range of 250°C to 260°C, and a solder with a melting point of 217°C to 220°C. Apply a small amount of solder paste to the PCB pad, and use a reflow oven or a hot air gun to solder the component.

  • The maximum allowed voltage derating for the S2GHE3/52T is 80% of the maximum rated voltage, which is 52 V. Therefore, the maximum allowed voltage derating is 41.6 V.

  • To calculate the power dissipation of the S2GHE3/52T, use the following formula: Pd = (Vds x Ids) + (Vgs x Igs), where Pd is the power dissipation, Vds is the drain-to-source voltage, Ids is the drain-to-source current, Vgs is the gate-to-source voltage, and Igs is the gate-to-source current.

  • The thermal resistance of the S2GHE3/52T is RthJA = 40 K/W (junction-to-ambient) and RthJC = 2.5 K/W (junction-to-case).