Datasheets
S-22H10I10 by:

64X4 NON-VOLATILE SRAM, 200ns, PDIP18, DIP-18

Part Details for S-22H10I10 by Epson Electronics America Inc

Overview of S-22H10I10 by Epson Electronics America Inc

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Applications Space Technology Aerospace and Defense Energy and Power Systems

Part Details for S-22H10I10

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S-22H10I10 Part Data Attributes:

S-22H10I10 Epson Electronics America Inc
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S-22H10I10 Epson Electronics America Inc 64X4 NON-VOLATILE SRAM, 200ns, PDIP18, DIP-18
Part Life Cycle Code Obsolete
Ihs Manufacturer SEIKO EPSON CORP
Part Package Code DIP
Package Description DIP,
Pin Count 18
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.41
Access Time-Max 200 ns
JESD-30 Code R-PDIP-T18
Length 22 mm
Memory Density 256 bit
Memory IC Type NON-VOLATILE SRAM
Memory Width 4
Number of Functions 1
Number of Terminals 18
Number of Words 64 words
Number of Words Code 64
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 64X4
Package Body Material PLASTIC/EPOXY
Package Code DIP
Package Shape RECTANGULAR
Package Style IN-LINE
Parallel/Serial PARALLEL
Qualification Status Not Qualified
Seated Height-Max 5.08 mm
Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V
Supply Voltage-Nom (Vsup) 5 V
Surface Mount NO
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Form THROUGH-HOLE
Terminal Pitch 2.54 mm
Terminal Position DUAL
Width 7.62 mm

Alternate Parts for S-22H10I10

This table gives cross-reference parts and alternative options found for S-22H10I10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of S-22H10I10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
S-22H10I10 Non-Volatile SRAM, 64X4, 200ns, CMOS, PDIP18, DIP-18 Seiko Epson Corporation S-22H10I10 vs S-22H10I10
Part Number Description Manufacturer Compare
DS2015 Multi-Port SRAM, 64X4, CMOS, PDIP18, Dallas Semiconductor S-22H10I10 vs DS2015
X2210AD Non-Volatile SRAM, 64X4, 250ns, NMOS, CDIP18, HERMETIC SEALED, CERDIP-18 Xicor Inc S-22H10I10 vs X2210AD
X22C10PI Non-Volatile SRAM, 64X4, 120ns, CMOS, PDIP18, 0.300 INCH, PLASTIC, DIP-18 Xicor Inc S-22H10I10 vs X22C10PI
CAT22C10LI30 64X4 NON-VOLATILE SRAM, 300ns, PDIP18, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DIP-18 onsemi S-22H10I10 vs CAT22C10LI30
X24C45PI Non-Volatile SRAM, 16X16, 375ns, CMOS, PDIP8, PLASTIC, DIP-8 Xicor Inc S-22H10I10 vs X24C45PI
X2210AP Non-Volatile SRAM, 64X4, 250ns, NMOS, PDIP18, PLASTIC, DIP-18 Xicor Inc S-22H10I10 vs X2210AP
X2210D Non-Volatile SRAM, 64X4, 300ns, NMOS, CDIP18, HERMETIC SEALED, CERDIP-18 Xicor Inc S-22H10I10 vs X2210D
CAT24C44PI 16X16 NON-VOLATILE SRAM, 375ns, PDIP8, PLASTIC, DIP-8 onsemi S-22H10I10 vs CAT24C44PI
X2210DM/5 Non-Volatile SRAM, 64X4, 300ns, CMOS, CDIP18, HERMETIC SEALED, CERDIP-18 Xicor Inc S-22H10I10 vs X2210DM/5
S-24H45I10 16X16 NON-VOLATILE SRAM, 300ns, PDIP8, DIP-8 Epson Electronics America Inc S-22H10I10 vs S-24H45I10

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