Part Details for RUS100N02TB by ROHM Semiconductor
Overview of RUS100N02TB by ROHM Semiconductor
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for RUS100N02TB
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
71Y9257
|
Newark | Mosfet Transistor, N Channel, 10 A, 20 V, 0.008 Ohm, 4.5 V, 1 V Rohs Compliant: Yes |Rohm RUS100N02TB Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$1.4200 / $2.1500 | Buy Now |
|
DISTI #
RUS100N02TBCT-ND
|
DigiKey | MOSFET N-CH 20V 10A 8SOP Min Qty: 1 Lead time: 21 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
125 In Stock |
|
$1.3668 / $2.0700 | Buy Now |
|
|
Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
|
$0.9260 | Buy Now |
|
|
Quest Components | 1646 |
|
$0.8640 / $2.3040 | Buy Now | |
|
|
Ameya Holding Limited | MOSFET N-CH 20V 10A 8SOP Min Qty: 1 | 100-Authorized Distributor |
|
$0.8140 / $2.0477 | Buy Now |
|
|
CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2016 Date Code: 2016 | 2058 |
|
$0.5760 / $1.4640 | Buy Now |
Part Details for RUS100N02TB
RUS100N02TB CAD Models
RUS100N02TB Part Data Attributes:
|
|
RUS100N02TB
ROHM Semiconductor
Buy Now
Datasheet
|
Compare Parts:
RUS100N02TB
ROHM Semiconductor
Power Field-Effect Transistor, 10A I(D), 20V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | ROHM CO LTD | |
| Package Description | SOP-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | ROHM Semiconductor | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.013 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 36 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for RUS100N02TB
This table gives cross-reference parts and alternative options found for RUS100N02TB. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RUS100N02TB, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDS6898AZD84Z | Power Field-Effect Transistor, 9.4A I(D), 20V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | RUS100N02TB vs FDS6898AZD84Z |
| FDS6898AZL86Z | Power Field-Effect Transistor, 9.4A I(D), 20V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | RUS100N02TB vs FDS6898AZL86Z |