Part Details for RTQ025P02TR by ROHM Semiconductor
Overview of RTQ025P02TR by ROHM Semiconductor
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for RTQ025P02TR
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
RTQ025P02CT-ND
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DigiKey | MOSFET P-CH 20V 2.5A TSMT6 Min Qty: 1 Lead time: 21 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | Limited Supply - Call |
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$0.2013 / $1.0000 | Buy Now |
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DISTI #
755-RTQ025P02TR
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Mouser Electronics | MOSFETs P-CH 20V 2.5A TSMT6 RoHS: Compliant | 2970 |
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$0.2010 / $0.6100 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks Container: Reel | 0Reel |
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$0.2120 | Buy Now |
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Quest Components | 2500MA, 20V, P-CHANNEL, SI, SMALL SIGNAL, MOSFET | 950 |
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$0.1885 / $0.4524 | Buy Now |
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Win Source Electronics | MOSFET P-CH 20V 2.5A TSMT6 | 14900 |
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$0.0950 / $0.1420 | Buy Now |
Part Details for RTQ025P02TR
RTQ025P02TR CAD Models
RTQ025P02TR Part Data Attributes
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RTQ025P02TR
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
RTQ025P02TR
ROHM Semiconductor
Small Signal Field-Effect Transistor, 2.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT6, 6 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ROHM CO LTD | |
| Package Description | SMALL OUTLINE, R-PDSO-G6 | |
| Pin Count | 6 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | ROHM Semiconductor | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 2.5 A | |
| Drain-source On Resistance-Max | 0.11 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e1 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.25 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for RTQ025P02TR
This table gives cross-reference parts and alternative options found for RTQ025P02TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RTQ025P02TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDC634P_NL | Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6 | Fairchild Semiconductor Corporation | RTQ025P02TR vs FDC634P_NL |
| SI3422DV | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Vishay Siliconix | RTQ025P02TR vs SI3422DV |
| FDC5614PL99Z | Small Signal Field-Effect Transistor, 3A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | RTQ025P02TR vs FDC5614PL99Z |
| FDC655AND87Z | Small Signal Field-Effect Transistor, 6.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | RTQ025P02TR vs FDC655AND87Z |
| FDC633ND84Z | Small Signal Field-Effect Transistor, 5.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | RTQ025P02TR vs FDC633ND84Z |
| RSQ030P03TR | Small Signal Field-Effect Transistor, 3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT6, 6 PIN | ROHM Semiconductor | RTQ025P02TR vs RSQ030P03TR |
| FDC633NL99Z | Small Signal Field-Effect Transistor, 5.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | RTQ025P02TR vs FDC633NL99Z |
| FDW9926A | Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8 | Fairchild Semiconductor Corporation | RTQ025P02TR vs FDW9926A |
| FDC5614PS62Z | Small Signal Field-Effect Transistor, 3A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | RTQ025P02TR vs FDC5614PS62Z |
| FDC855N | 6100mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-193AA, ROHS COMPLIANT, SUPERSOT-6 | Rochester Electronics LLC | RTQ025P02TR vs FDC855N |