Part Details for RT3T66M by Isahaya Electronics Corporation
Overview of RT3T66M by Isahaya Electronics Corporation
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- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Internet of Things (IoT)
Computing and Data Storage
Aerospace and Defense
Healthcare
Telecommunications
Automotive
Part Details for RT3T66M
RT3T66M CAD Models
RT3T66M Part Data Attributes
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RT3T66M
Isahaya Electronics Corporation
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RT3T66M
Isahaya Electronics Corporation
Transistor
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Part Life Cycle Code | Contact Manufacturer | |
Ihs Manufacturer | ISAHAYA ELECTRONICS CORP | |
Package Description | SMALL OUTLINE, R-PDSO-G6 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Collector Current-Max (IC) | 0.1 A | |
Collector-Emitter Voltage-Max | 50 V | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | |
DC Current Gain-Min (hFE) | 100 | |
JESD-30 Code | R-PDSO-G6 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | NPN AND PNP | |
Power Dissipation Ambient-Max | 0.15 W | |
Power Dissipation-Max (Abs) | 0.15 W | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 200 MHz | |
VCEsat-Max | 0.3 V |