Datasheets
RT1N237U by: Isahaya Electronics Corporation

Transistor

Part Details for RT1N237U by Isahaya Electronics Corporation

Overview of RT1N237U by Isahaya Electronics Corporation

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Applications Energy and Power Systems Renewable Energy Automotive

Part Details for RT1N237U

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RT1N237U Part Data Attributes

RT1N237U Isahaya Electronics Corporation
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RT1N237U Isahaya Electronics Corporation Transistor
Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer ISAHAYA ELECTRONICS CORP
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.21.00.75
Category CO2 Kg 8.54
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 22
Collector Current-Max (IC) 0.1 A
Collector-Emitter Voltage-Max 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 80
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 0.15 W
Power Dissipation-Max (Abs) 0.15 W
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 200 MHz
VCEsat-Max 0.3 V

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