Datasheets
RSS130N03FU6TB by: ROHM Semiconductor

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Part Details for RSS130N03FU6TB by ROHM Semiconductor

Overview of RSS130N03FU6TB by ROHM Semiconductor

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for RSS130N03FU6TB

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RSS130N03FU6TB Part Data Attributes:

RSS130N03FU6TB ROHM Semiconductor
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RSS130N03FU6TB ROHM Semiconductor Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ROHM CO LTD
Package Description ,
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE
Drain Current-Max (ID) 13 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Moisture Sensitivity Level 1
Number of Elements 1
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2 W
Surface Mount YES
Time@Peak Reflow Temperature-Max (s) 10

Alternate Parts for RSS130N03FU6TB

This table gives cross-reference parts and alternative options found for RSS130N03FU6TB. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RSS130N03FU6TB, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
RSS130N03 Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 ROHM Semiconductor RSS130N03FU6TB vs RSS130N03
Part Number Description Manufacturer Compare
IRF7805PBF Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 Infineon Technologies AG RSS130N03FU6TB vs IRF7805PBF
IRF7413TR Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 Infineon Technologies AG RSS130N03FU6TB vs IRF7413TR
IRF7413TRPBF-1 Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET, Infineon Technologies AG RSS130N03FU6TB vs IRF7413TRPBF-1
IRF7805TR Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 Infineon Technologies AG RSS130N03FU6TB vs IRF7805TR
IRF7413PBF-1 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Infineon Technologies AG RSS130N03FU6TB vs IRF7413PBF-1
FDS6294 Power Field-Effect Transistor, 13A I(D), 30V, 0.0113ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation RSS130N03FU6TB vs FDS6294
IRF7413UPBF Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier RSS130N03FU6TB vs IRF7413UPBF
IRF7811WPBF Power Field-Effect Transistor, 14A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 International Rectifier RSS130N03FU6TB vs IRF7811WPBF
IRF7811WGPBF Power Field-Effect Transistor, 14A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 International Rectifier RSS130N03FU6TB vs IRF7811WGPBF
IRF7413 Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 International Rectifier RSS130N03FU6TB vs IRF7413

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