Part Details for RSS060P05FRATB by ROHM Semiconductor
Overview of RSS060P05FRATB by ROHM Semiconductor
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for RSS060P05FRATB
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
RSS060P05FRATBCT-ND
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DigiKey | MOSFET P-CH 45V 6A 8SOP Min Qty: 1 Lead time: 21 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | Temporarily Out of Stock |
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$0.3588 / $1.5300 | Buy Now |
DISTI #
RSS060P05FRATB
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Avnet Americas | 4V Drive Pch MOSFET (Corresponds to AEC-Q101) - Tape and Reel (Alt: RSS060P05FRATB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
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$0.3731 / $0.4248 | Buy Now |
DISTI #
755-RSS060P05FRATB
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Mouser Electronics | MOSFETs Pch -45V Vds -6A 0.038Rds(on) 23Qg RoHS: Compliant | 0 |
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Order Now | |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks Container: Reel | 0Reel |
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$0.3780 | Buy Now |
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Quest Components | 1919 |
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$1.9050 / $3.8100 | Buy Now | |
DISTI #
RSS060P05FRATB
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TME | Transistor: P-MOSFET, unipolar, -45V, -6A, Idm: -24A, 2W, SOP8 Min Qty: 1 | 0 |
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$0.4810 / $0.7900 | RFQ |
DISTI #
RSS060P05FRATB
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Avnet Silica | 4V Drive Pch MOSFET (Corresponds to AEC-Q101) (Alt: RSS060P05FRATB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 23 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for RSS060P05FRATB
RSS060P05FRATB CAD Models
RSS060P05FRATB Part Data Attributes
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RSS060P05FRATB
ROHM Semiconductor
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Datasheet
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RSS060P05FRATB
ROHM Semiconductor
Power Field-Effect Transistor, 6A I(D), 45V, 0.053ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | SMALL OUTLINE, R-PDSO-G6 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 45 V | |
Drain Current-Max (ID) | 6 A | |
Drain-source On Resistance-Max | 0.053 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G6 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 24 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |