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Small Signal Field-Effect Transistor, 2A I(D), 45V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TSMT3, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
RSR020P05TLCT-ND
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DigiKey | MOSFET P-CH 45V 2A TSMT3 Min Qty: 1 Lead time: 21 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | Limited Supply - Call |
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$0.2450 / $0.7400 | Buy Now |
DISTI #
755-RSR020P05TL
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Mouser Electronics | MOSFET TRANS MOSFET P-CH 3PIN TSMT T/R RoHS: Compliant | 736 |
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$0.2440 / $0.7600 | Buy Now |
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Future Electronics | RSR020P05 Series P-Channel 45 V 190 mOhm 0.54 W SMT Power Mosfet - TSMT3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.2450 / $0.2600 | Buy Now |
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Future Electronics | RSR020P05 Series P-Channel 45 V 190 mOhm 0.54 W SMT Power Mosfet - TSMT3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.2450 / $0.2600 | Buy Now |
DISTI #
RSR020P05TL
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Avnet Asia | 4V DRIVE PCH MOSFET (Alt: RSR020P05TL) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days | 0 |
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RFQ | |
DISTI #
RSR020P05TL
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Avnet Silica | 4V DRIVE PCH MOSFET (Alt: RSR020P05TL) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days | Silica - 0 |
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Buy Now |
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RSR020P05TL
ROHM Semiconductor
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Datasheet
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RSR020P05TL
ROHM Semiconductor
Small Signal Field-Effect Transistor, 2A I(D), 45V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TSMT3, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | SMALL OUTLINE, R-PDSO-G3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 45 V | |
Drain Current-Max (ID) | 2 A | |
Drain-source On Resistance-Max | 0.28 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e1 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 1 W | |
Surface Mount | YES | |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |