-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor, 4.5A I(D), 30V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT6, 6 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
RSQ045N03CT-ND
|
DigiKey | MOSFET N-CH 30V 4.5A TSMT6 Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) | Temporarily Out of Stock |
|
$0.9300 | Buy Now |
DISTI #
755-RSQ045N03TR
|
Mouser Electronics | MOSFETs N-CH 30V 4.5A TSMT6 RoHS: Compliant | 0 |
|
Order Now | |
|
Future Electronics | N-Channel 1.25 W 30 V 56 mOhm Surface Mount 4 V Drive MosFet - TSMT-6 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks Container: Reel | 0Reel |
|
$1.1700 / $1.2200 | Buy Now |
DISTI #
RSQ045N03TR
|
TTI | MOSFETs N-CH 30V 4.5A TSMT6 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 6000 In Stock |
|
$0.2950 | Buy Now |
DISTI #
C1S625900457657
|
Chip1Stop | Trans MOSFET N-CH 30V 4.5A 6-Pin TSMT T/R RoHS: Compliant pbFree: Yes Container: Cut Tape | 5 |
|
$0.4620 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
RSQ045N03TR
ROHM Semiconductor
Buy Now
Datasheet
|
Compare Parts:
RSQ045N03TR
ROHM Semiconductor
Power Field-Effect Transistor, 4.5A I(D), 30V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT6, 6 PIN
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | SMALL OUTLINE, R-PDSO-G6 | |
Pin Count | 6 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 4.5 A | |
Drain-source On Resistance-Max | 0.056 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e1 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.25 W | |
Pulsed Drain Current-Max (IDM) | 18 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |