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Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
RQ7E110AJTCRCT-ND
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DigiKey | MOSFET N-CH 30V 11A TSMT8 Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
586 In Stock |
|
$0.3513 / $1.5000 | Buy Now |
DISTI #
RQ7E110AJTCR
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Avnet Americas | Nch 30V 11A Middle Power MOSFET, TSMT8, Nch, JEDEC TSMT8 - Tape and Reel (Alt: RQ7E110AJTCR) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
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RFQ | |
DISTI #
755-RQ7E110AJTCR
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Mouser Electronics | MOSFETs Nch 30V 11A Si MOSFET | 1224 |
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$0.3510 / $1.2600 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks Container: Reel | 0Reel |
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$0.3700 | Buy Now |
DISTI #
80318893
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Verical | Trans MOSFET N-CH 30V 11A 8-Pin TSMT T/R RoHS: Compliant Min Qty: 122 Package Multiple: 1 Date Code: 2301 | Americas - 3000 |
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$0.5830 / $0.6711 | Buy Now |
DISTI #
82737212
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Verical | Trans MOSFET N-CH 30V 11A 8-Pin TSMT T/R RoHS: Compliant Min Qty: 21 Package Multiple: 1 | Americas - 400 |
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$0.7425 / $1.5000 | Buy Now |
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Quest Components | 2400 |
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$0.6160 / $1.7600 | Buy Now | |
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Ameya Holding Limited | Transistors FETs, MOSFETs Single Min Qty: 1 | 40-Authorized Distributor |
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$0.2540 / $0.8100 | Buy Now |
DISTI #
C1S625903744271
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Chip1Stop | Nch 30V 11A Middle Power MOSFET RoHS: Compliant Container: Cut Tape | 400 |
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$0.5290 / $1.1300 | Buy Now |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2023 Date Code: 2023 | 3000 |
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$0.3520 / $1.0470 | Buy Now |
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RQ7E110AJTCR
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
RQ7E110AJTCR
ROHM Semiconductor
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROHM CO LTD | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Date Of Intro | 2016-05-24 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Avalanche Energy Rating (Eas) | 18 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 11 A | |
Drain-source On Resistance-Max | 0.009 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 44 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |